18172240. DEVICE WITH THROUGH VIA AND RELATED METHODS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 DEVICE WITH THROUGH VIA AND RELATED METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DEVICE WITH THROUGH VIA AND RELATED METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
DEVICE WITH THROUGH VIA AND RELATED METHODS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chun-Yuan Chen of Hsinchu (TW)
Ching-Wei Tsai of Hsinchu (TW)
Shang-Wen Chang of Hsinchu (TW)
DEVICE WITH THROUGH VIA AND RELATED METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18172240 titled 'DEVICE WITH THROUGH VIA AND RELATED METHODS
Simplified Explanation
The patent application describes a device with a stack of semiconductor nanostructures, a gate structure wrapping around the nanostructures, a source/drain region, a contact structure, a backside conductive trace, a first through via, and a gate isolation structure.
- The device includes a stack of semiconductor nanostructures.
- The gate structure wraps around the semiconductor nanostructures and extends in a first direction.
- A source/drain region abuts the gate structure and the stack in a second direction transverse to the first direction.
- A contact structure is located on the source/drain region.
- A backside conductive trace is positioned under the stack, extending in the second direction.
- A first through via extends vertically from the contact structure to the top surface of the backside dielectric layer.
- A gate isolation structure abuts the first through via in the second direction.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance electronics
Problems Solved
This technology helps in:
- Enhancing device performance
- Improving integration of components
Benefits
The benefits of this technology include:
- Increased efficiency
- Enhanced functionality
Potential Commercial Applications
This technology could be used in:
- Semiconductor manufacturing industry
- Electronics research and development
Possible Prior Art
There is no information provided about prior art in the patent application.
Unanswered Questions
How does this device compare to existing semiconductor structures?
The article does not provide a direct comparison to existing semiconductor structures, making it difficult to assess the novelty and advantages of this technology.
What specific improvements in performance can be expected from this device?
The article does not detail the specific performance enhancements that can be achieved with this device, leaving the potential benefits somewhat vague.
Original Abstract Submitted
A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.
