17672033. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Wandon Kim of Seongnam-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17672033 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The abstract describes an integrated circuit (IC) device that includes a conductive region, an insulating film, a conductive plug, and a conductive barrier pattern. The conductive barrier pattern is positioned between the conductive region and the conductive plug.
- The conductive region is made of a first metal and is located on a substrate.
- An insulating film is placed on top of the conductive region.
- A conductive plug, made of a second metal, passes through the insulating film and extends vertically.
- A conductive barrier pattern is present between the conductive region and the conductive plug.
- The conductive barrier pattern has a first surface in contact with the conductive region and a second surface in contact with the conductive plug.
- The conductive plug is in contact with the bottom surface and lower sidewall of the conductive barrier pattern, while the upper sidewall of the conductive plug is in contact with the insulating film.
- The conductive barrier pattern includes a vertical barrier portion between the insulating film and the conductive plug.
- The vertical barrier portion tapers in width along a first direction away from the conductive region.
Potential Applications
- This technology can be used in the manufacturing of integrated circuits (ICs) and other electronic devices.
- It can be applied in various industries that utilize ICs, such as telecommunications, consumer electronics, automotive, and aerospace.
Problems Solved
- The conductive barrier pattern helps to prevent unwanted electrical interactions between the conductive region and the conductive plug.
- The tapering width of the vertical barrier portion allows for better control of electrical conductivity and signal transmission within the IC device.
Benefits
- The use of the conductive barrier pattern improves the overall performance and reliability of the IC device.
- The tapering width of the vertical barrier portion enhances the efficiency and functionality of the IC device.
- This technology enables the integration of multiple metal layers within the IC device, leading to increased circuit density and improved functionality.
Original Abstract Submitted
An integrated circuit (IC) device includes a conductive region including a first metal on a substrate. An insulating film is on the conductive region. A conductive plug including a second metal passes through the insulating film and extends in a vertical direction. A conductive barrier pattern is between the conductive region and the conductive plug. The conductive barrier pattern has a first surface in contact with the conductive region and a second surface in contact with the conductive plug. A bottom surface and a lower sidewall of the conductive plug are in contact with the conductive barrier pattern, and an upper sidewall of the conductive plug is in contact with the insulating film. The conductive barrier pattern includes a vertical barrier portion between the insulating film and the conductive plug, and the vertical barrier portion has a width tapering along a first direction away from the conductive region.
