17520697. TRANSISTOR USAGE METERING THROUGH BIAS TEMPERATURE INSTABILITY MONITORING simplified abstract (International Business Machines Corporation)

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TRANSISTOR USAGE METERING THROUGH BIAS TEMPERATURE INSTABILITY MONITORING

Organization Name

International Business Machines Corporation

Inventor(s)

Effendi Leobandung of Stormville NY (US)

TRANSISTOR USAGE METERING THROUGH BIAS TEMPERATURE INSTABILITY MONITORING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17520697 titled 'TRANSISTOR USAGE METERING THROUGH BIAS TEMPERATURE INSTABILITY MONITORING

Simplified Explanation

The patent application describes a circuit for monitoring the usage of an active field effect transistor (FET) by comparing its current with a reference FET. The active and reference FETs are formed in the same structure and are stacked on top of each other at a common gate. The circuit includes a differential current sense circuit (DCSC) and switches to connect the FETs to different voltage sources. The DCSC measures and compares the currents through the active and reference FETs when a threshold voltage is applied to the common gate.

  • The circuit monitors the usage of an active FET by comparing its current with a reference FET.
  • The active and reference FETs are formed in the same structure and stacked on top of each other at a common gate.
  • The circuit includes a differential current sense circuit (DCSC) and switches to connect the FETs to different voltage sources.
  • The DCSC measures and compares the currents through the active and reference FETs when a threshold voltage is applied to the common gate.

Potential Applications

  • Monitoring the usage of FETs in electronic devices.
  • Detecting and diagnosing faults or abnormalities in FETs.
  • Optimizing power consumption in FET-based circuits.

Problems Solved

  • Lack of a reliable and accurate method to monitor the usage of FETs.
  • Difficulty in detecting and diagnosing faults or abnormalities in FETs.
  • Inefficient power consumption in FET-based circuits.

Benefits

  • Provides a reliable and accurate method to monitor the usage of FETs.
  • Enables the detection and diagnosis of faults or abnormalities in FETs.
  • Helps optimize power consumption in FET-based circuits.


Original Abstract Submitted

A circuit for monitoring usage of an active field effect transistor (FET) includes the active FET and a reference FET, formed in a same structure as the active FET. The active FET and the reference FET both are pFET or both are nFET, and are stacked on each other at a common gate. The circuit also includes a differential current sense circuit (DCSC) and a plurality of switches for connecting terminals of the FETs to logic voltage, ground voltage, and/or the DCSC. The DCSC is configured to measure and compare currents through each of the active and reference FETs when a threshold voltage is applied to the common gate.

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