17717268. SEMICONDUCTOR DEVICE INCLUDING AIR GAP simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE INCLUDING AIR GAP
Organization Name
Inventor(s)
Sooyeon Hong of Yongin-si (KR)
Yoonyoung Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING AIR GAP - A simplified explanation of the abstract
This abstract first appeared for US patent application 17717268 titled 'SEMICONDUCTOR DEVICE INCLUDING AIR GAP
Simplified Explanation
The patent application describes a semiconductor device that includes an active pattern, a gate structure, a source/drain region, a source/drain contact, and a contact insulating layer. The contact insulating layer contains at least one air gap, which is located on the upper surface of the source/drain contact.
- The semiconductor device has an active pattern on a substrate, a gate structure on the active pattern, and a source/drain region on the sides of the gate structure.
- A source/drain contact is connected to the source/drain region.
- The contact insulating layer, which is on top of the source/drain contact, includes at least one air gap.
Potential Applications
- This technology can be used in the manufacturing of semiconductor devices, such as integrated circuits and transistors.
- It can improve the performance and efficiency of electronic devices, leading to advancements in various industries, including consumer electronics, telecommunications, and automotive.
Problems Solved
- The inclusion of air gaps in the contact insulating layer helps to reduce parasitic capacitance, which can improve the overall performance of the semiconductor device.
- The air gaps also help to minimize leakage current, which can enhance the energy efficiency of the device.
Benefits
- The presence of air gaps in the contact insulating layer improves the electrical characteristics of the semiconductor device.
- This technology enables the production of more efficient and high-performance electronic devices.
- It can contribute to the development of smaller and faster devices, as well as reducing power consumption.
Original Abstract Submitted
A semiconductor device of the disclosure includes an active pattern extending on a substrate in a first direction, a gate structure extending on the active pattern in a second direction intersecting the first direction, a source/drain region disposed on at least one side of the gate structure, a source/drain contact connected to the source/drain region, and a contact insulating layer disposed on the source/drain contact. The contact insulating layer includes at least one air gap. The air gap is disposed on an upper surface of the source/drain contact.
