18056954. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
WOO BIN Song of HWASEONG-SI (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18056954 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that improves performance and reliability by using source/drain engineering in a transistor with an oxide semiconductor layer. Here are the key points:
- The semiconductor device includes a substrate and a metal oxide layer on the substrate.
- A source/drain pattern is in contact with the metal oxide layer, with a portion protruding from the top surface of the metal oxide layer.
- Multiple gate structures are placed on the metal oxide layer, with the source/drain pattern in between. Each gate structure has gate spacers and an insulating material layer.
- The insulating material layer is in contact with the metal oxide layer but does not extend along the top surface of the source/drain pattern.
- A contact is placed on the source/drain pattern and is connected to it.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and production
Problems solved by this technology:
- Enhances performance and reliability of the semiconductor device
- Improves source/drain engineering in transistors with oxide semiconductor layers
Benefits of this technology:
- Increased performance and reliability of the semiconductor device
- Enhanced source/drain engineering for transistors with oxide semiconductor layers
Original Abstract Submitted
Aspects of the present inventive concept provide a semiconductor device capable of enhancing performance and reliability through source/drain engineering in a transistor including an oxide semiconductor layer. The semiconductor device includes a substrate, a metal oxide layer disposed on the substrate, a source/drain pattern being in contact with the metal oxide layer and including a portion protruding from a top surface of the metal oxide layer, a plurality of gate structures disposed on the metal oxide layer with the source/drain pattern interposed therebetween and each including gate spacers and an insulating material layer, the insulating material layer being in contact with the metal oxide layer, and not extending along a top surface of the source/drain pattern, and a contact disposed on the source/drain pattern, the contact being connected to the source/drain pattern.
