18199516. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sang-Yong Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18199516 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with a first channel pattern, a first gate electrode, a first source/drain electrode, and a second source/drain electrode.
- The first channel pattern is located on the substrate and has a first side and a second side in opposite directions.
- The first gate electrode is positioned on the first side of the first channel pattern.
- The first source/drain electrode is placed on the first side of the first channel pattern.
- The second source/drain electrode is located on the second side of the first channel pattern.
- The first gate electrode overlaps the second source/drain electrode in the first direction.
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
- Enhanced performance of semiconductor devices
- Improved efficiency in electronic devices
- Increased functionality of integrated circuits
Benefits
- Higher speed and performance
- Better reliability and durability
- Enhanced functionality and versatility
Original Abstract Submitted
A semiconductor device includes a substrate. A first channel pattern is disposed on the substrate. The first channel pattern includes a first side and a second side opposite to each other in a first direction. A first gate electrode is disposed on the first side of the first channel pattern. A first source/drain electrode is disposed on the first side of the first channel pattern. A second source/drain electrode is disposed on the second side of the first channel pattern. The first gate electrode overlaps the second source/drain electrode in the first direction.
