18364521. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyoungwoo Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18364521 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes:
- Substrate with a fin-type active pattern
- Source/drain regions on the fin-type active pattern
- Interlayer insulating layer on the isolation insulating layer
- Contact structure electrically connected to the source/drain regions
- Buried conductive structure connected to the contact structure and buried in the interlayer insulating layer
- Power delivery structure penetrating the substrate and in contact with the buried conductive structure
- First contact plug and first conductive barrier in the buried conductive structure
- Second contact plug in direct contact with the bottom surface of the first contact plug
Potential applications of this technology:
- Semiconductor devices
- Integrated circuits
- Electronics manufacturing
Problems solved by this technology:
- Improved electrical connectivity
- Enhanced power delivery
- Increased efficiency in semiconductor devices
Benefits of this technology:
- Higher performance
- Better reliability
- Increased functionality
Original Abstract Submitted
A semiconductor device includes a substrate having a fin-type active pattern, source/drain regions on the fin-type active pattern, an interlayer insulating layer on the isolation insulating layer, and on the source/drain region, a contact structure electrically connected to the source/drain regions, a buried conductive structure electrically connected to the contact structure and buried in the interlayer insulating layer, and a power delivery structure that penetrates the substrate, and is in contact with a bottom surface of the buried conductive structure. The buried conductive structure includes a first contact plug, and a first conductive barrier on a side surface of the first contact plug and spaced apart from a bottom surface of the first contact plug. The power delivery structure includes a second contact plug in direct contact with the bottom surface of the first contact plug.
