18179059. SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME
Organization Name
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Inventor(s)
Junpei Hisada of Nonoichi Ishikawa (JP)
Hiroaki Katou of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18179059 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes multiple semiconductor regions, electrodes, and a gate electrode. Here are some key points to explain the patent/innovation:
- The device includes first to fourth semiconductor regions, with the third region located on a portion of the second region.
- The fourth semiconductor region has two portions with different impurity concentrations, where the first portion has a lower impurity concentration than the second portion.
- A gate electrode faces the second semiconductor region via a gate insulating layer in a specific direction.
- The second electrode is located on the second and fourth semiconductor regions, contacting the first and second portions.
- The second electrode includes a connection part that contacts the third semiconductor region and the portion of the second semiconductor region in the specific direction.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, sensors, and power electronics.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the impurity concentrations in different regions, enhancing the overall functionality of the device.
Benefits
The benefits of this technology include increased device performance, better control over impurity concentrations, and potential cost savings in semiconductor manufacturing processes.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for the production of high-performance electronic devices, leading to advancements in consumer electronics, automotive electronics, and industrial equipment.
Possible Prior Art
One possible prior art for this technology could be the development of similar semiconductor devices with multiple regions and electrodes, but with different configurations or impurity concentration profiles.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency.
What are the specific manufacturing processes involved in producing this semiconductor device?
The article does not delve into the specific manufacturing processes involved in producing this semiconductor device.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a first electrode, first to fourth semiconductor regions, a gate electrode, and a second electrode. The third semiconductor region is located on a portion of the second semiconductor region. The fourth semiconductor region includes a first portion positioned on the third semiconductor region and a second portion arranged with the first portion in a second direction. A first-conductivity-type impurity concentration of the first portion is less than a first-conductivity-type impurity concentration of the second portion. The gate electrode faces the second semiconductor region via a gate insulating layer in the second direction. The second electrode is located on the second and fourth semiconductor regions. The second electrode contacts the first and second portions. The second electrode includes a connection part that contacts the third semiconductor region and the portion of the second semiconductor region in the second direction.
