18244257. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jeongwon Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18244257 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes various innovative features:
- Active regions extending in a first direction on the substrate
- Device isolation layer surrounding the active regions
- Gate structures intersecting the active regions and extending in a second direction
- Source/drain regions on the active regions
- Contact plugs connected to the source/drain regions
- Vertical buried structure penetrating through the device isolation layer
- Vertical insulating layer covering side surfaces of the vertical buried structure
- Horizontal buried structure below the vertical buried structure
- First conductive barrier covering upper and side surfaces of the horizontal buried structure
- Metal-semiconductor compound pattern between the vertical buried structure and the first conductive barrier
- Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as integrated circuits, microprocessors, and memory devices.
- Problems Solved
This technology addresses the need for improved performance and efficiency in semiconductor devices by enhancing the connectivity and isolation of different components on the substrate.
- Benefits
The benefits of this technology include increased speed, reduced power consumption, improved reliability, and higher integration density in semiconductor devices.
- Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for producing cutting-edge electronic devices with enhanced performance and functionality.
- Possible Prior Art
One possible prior art for this technology could be the use of vertical and horizontal buried structures in semiconductor devices for improving device performance and integration.
- Unanswered Questions
- How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by this technology.
- What are the specific manufacturing processes involved in implementing the vertical and horizontal buried structures in this semiconductor device?
The article does not delve into the detailed manufacturing processes required to implement the vertical and horizontal buried structures in the semiconductor device.
Original Abstract Submitted
A semiconductor device includes a substrate including active regions extending in a first direction; a device isolation layer surrounding the active regions on the substrate; gate structures intersecting the active regions and extending on the substrate in a second direction; source/drain regions on the active regions; contact plugs connected to the source/drain regions, respectively; a vertical buried structure penetrating through at least a portion of the device isolation layer, and in contact with the contact plugs; a vertical insulating layer covering at least a portion of side surfaces of the vertical buried structure; a horizontal buried structure below the vertical buried structure; a first conductive barrier covering at least a portion of an upper surface and side surfaces of the horizontal buried structure; and a metal-semiconductor compound pattern between the vertical buried structure and the first conductive barrier, wherein the vertical buried structure is between source/drain regions.
