17849734. METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
METHOD FOR FORMING SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sheng-Tsung Wang of Hsinchu (TW)
Huan-Chieh Su of Changhua County (TW)
Chun-Yuan Chen of Hsinchu (TW)
Min-Hsuan Lu of Hsinchu City (TW)
Chih-Hao Wang of Hsinchu County (TW)
METHOD FOR FORMING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17849734 titled 'METHOD FOR FORMING SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for forming a semiconductor device. Here are the key points:
- A transistor is formed and embedded in a dielectric layer over a semiconductor substrate.
- A first gate cutting process is performed to create an opening in the dielectric layer.
- An insulator post is formed in the opening.
- A second gate cutting process is performed to create another opening in the dielectric layer.
- A power via is formed in the second opening.
- A conductor is formed and embedded in the semiconductor substrate, located under and electrically connected to the power via.
Potential Applications
This technology can be applied in various semiconductor devices, including but not limited to:
- Integrated circuits
- Microprocessors
- Memory devices
- Power management systems
Problems Solved
The method described in the patent application addresses the following problems:
- Efficiently embedding a transistor in a dielectric layer over a semiconductor substrate.
- Creating openings in the dielectric layer for insulator posts and power vias.
- Ensuring proper electrical connection between the conductor and the power via.
Benefits
The use of this technology offers several benefits:
- Improved integration of transistors in semiconductor devices.
- Enhanced power management capabilities.
- Increased efficiency and performance of the semiconductor device.
- Potential for miniaturization and cost reduction in semiconductor manufacturing.
Original Abstract Submitted
A method for forming a semiconductor device includes followings. A transistor is formed, and the transistor is embedded in a dielectric layer and disposed over a semiconductor substrate. A first gate cutting process is performed to form a first opening in the dielectric layer. An insulator post is formed in the first opening. A second gate cutting process is performed to form a second opening in the dielectric layer. A power via is formed in the second opening. A conductor is formed, wherein the conductor is embedded in the semiconductor substrate, and the conductor is located under and electrically connected to the power via.
