17896093. TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Marcus Johannes Henricus Van Dal of Linden (BE)

Gerben Doornbos of Kessel-Lo (BE)

TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 17896093 titled 'TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

Simplified Explanation

The patent application describes a transistor with specific layers and densities to improve performance.

• A first gate electrode is present.
• A ferroelectric layer is placed over the first gate electrode.
• A channel layer is located on the ferroelectric layer.
• A second gate electrode is positioned over the channel layer.
• A hole supply layer is situated between the second gate electrode and the channel layer.
• The electron trap density of the hole supply layer is higher than that of the channel layer.

Potential Applications

• Improved performance in transistors
• Enhanced memory storage devices
• Increased efficiency in electronic devices

Problems Solved

• Reduced leakage current
• Enhanced data retention
• Improved overall transistor performance

Benefits

• Higher electron trap density in the hole supply layer improves transistor efficiency
• Ferroelectric layer enhances memory storage capabilities
• Overall improved performance and reliability in electronic devices

Original Abstract Submitted

A transistor includes a first gate electrode, a ferroelectric layer, a channel layer, a second gate electrode, and a hole supply layer. The ferroelectric layer is disposed over the first gate electrode. The channel layer is disposed on the ferroelectric layer. The second gate electrode is disposed over the channel layer. The hole supply layer is located between the second gate electrode and the channel layer. An electron trap density of the hole supply layer is higher than an electron trap density of the channel layer.