18193758. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seok Hyeon Yoon of Suwon-si (KR)
Seung Hun Lee of Suwon-si (KR)
Seung Han Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18193758 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes the following features:
- First and second cell regions
- Substrate with first and second surfaces
- First to third active patterns in the first cell region, spaced apart in a second horizontal direction
- Fourth active pattern in the second cell region aligned with the second active pattern
- Active cut separating the second and fourth active patterns
- Source/drain region on the second active pattern
- Buried rail on the second surface of the substrate, overlapping the second and fourth active patterns vertically
- Source/drain contact connecting the source/drain region to the buried rail
---
- Potential Applications
- Integrated circuits
- Semiconductor devices
- Electronics industry
- Problems Solved
- Improved performance of semiconductor devices
- Enhanced connectivity within the device
- Efficient use of space on the substrate
- Benefits
- Higher efficiency in electronic devices
- Increased functionality in integrated circuits
- Enhanced reliability of semiconductor devices
Original Abstract Submitted
A semiconductor device including: first and second cell regions; a substrate including first and second surfaces; first to third active patterns extending in a first horizontal direction in the first cell region, the first to third active patterns spaced apart from each other in a second horizontal direction; a fourth active pattern extending in the first horizontal direction in the second cell region, the fourth active pattern is aligned with the second active pattern in the first horizontal direction; an active cut separating the second and fourth active patterns; a source/drain region on the second active pattern; a buried rail extending in the first horizontal direction on the second surface of the substrate, the first buried rail overlaps each of the second and fourth active patterns in a vertical direction; and a source/drain contact penetrating the substrate and second active pattern and connecting the source/drain region to the buried rail.
