18051034. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICES

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

KEUN HWI Cho of Seoul (KR)

Soonmoon Jung of Seongnam-si (KR)

Dongwon Kim of Seongnam-si (KR)

Myung Gil Kang of Suwon-si (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18051034 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes semiconductor devices and methods of forming them. Here are the key points:

  • The semiconductor devices consist of a substrate with two regions separated by a device isolation layer.
  • On each region, there is a gate electrode, and these electrodes are aligned to each other in a specific direction.
  • An insulating separation pattern is present between the gate electrodes, extending in a different direction.
  • A connection structure electrically connects the two gate electrodes, and a signal line is connected to this structure.
  • The signal line extends in a direction perpendicular to the insulating separation pattern and overlaps it vertically.

Potential applications of this technology:

  • Integrated circuits: The semiconductor devices can be used in the production of integrated circuits for various electronic devices.
  • Memory devices: The technology can be applied to create memory devices with improved performance and efficiency.
  • Microprocessors: The semiconductor devices can be utilized in the manufacturing of microprocessors for faster and more efficient data processing.

Problems solved by this technology:

  • Improved device isolation: The device isolation layer helps prevent interference between different regions on the substrate, enhancing the overall performance and reliability of the semiconductor devices.
  • Efficient signal transmission: The connection structure and signal line enable effective electrical connection and transmission between the gate electrodes, improving the functionality of the devices.
  • Space optimization: The alignment and overlapping of components allow for compact designs, maximizing the use of available space on the substrate.

Benefits of this technology:

  • Enhanced performance: The improved device isolation and efficient signal transmission contribute to the overall performance and functionality of the semiconductor devices.
  • Space-saving design: The compact layout of components enables the creation of smaller and more efficient devices.
  • Cost-effectiveness: The methods of forming the semiconductor devices described in the patent application may offer cost advantages in manufacturing processes.


Original Abstract Submitted

Semiconductor devices and methods of forming the same are disclosed. The semiconductor devices may include a substrate including a first region and a second region, which are spaced apart from each other with a device isolation layer interposed therebetween, a first gate electrode and a second gate electrode on the first and second regions, respectively, an insulating separation pattern separating the first gate electrode and the second gate electrode from each other and extending in a second direction that traverses the first direction, a connection structure electrically connecting the first gate electrode to the second gate electrode, and a first signal line electrically connected to the connection structure. The first and second gate electrodes are extended in a first direction and are aligned to each other in the first direction. The first signal line may extend in the second direction and may vertically overlap the insulating separation pattern.