18188399. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18188399 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the patent application aims to improve element performance and reliability. It consists of a lower conductive pattern, an upper conductive pattern, and a first plug pattern connected to both patterns. The first plug pattern includes a first barrier pattern and a first plug metal pattern. The first plug metal pattern is composed of a first molybdenum pattern and a first tungsten pattern.
- The device includes a lower conductive pattern, an upper conductive pattern, and a first plug pattern.
- The first plug pattern is connected to both the lower and upper conductive patterns.
- The first plug pattern consists of a first barrier pattern and a first plug metal pattern.
- The first plug metal pattern is composed of a first molybdenum pattern and a first tungsten pattern.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit production
Problems solved by this technology:
- Improves element performance
- Enhances reliability of the semiconductor device
Benefits of this technology:
- Improved performance and reliability of semiconductor devices
- Enhanced functionality and efficiency of integrated circuits
- Increased lifespan and durability of electronic devices
Original Abstract Submitted
There is provided a semiconductor device capable of capable of improving element performance and reliability. A semiconductor device includes a lower conductive pattern disposed on a substrate, an upper conductive pattern disposed on the lower conductive pattern, and a first plug pattern disposed between the lower conductive pattern and the upper conductive pattern and connected to the lower conductive pattern and the upper conductive pattern. The first plug pattern includes a first barrier pattern that defines a first plug recess and a first plug metal pattern that fills the first plug recess, and the first plug metal pattern includes a first molybdenum pattern and a first tungsten pattern disposed on the first molybdenum pattern.
