17838894. CASCADED BIPOLAR JUNCTION TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
CASCADED BIPOLAR JUNCTION TRANSISTOR AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
CASCADED BIPOLAR JUNCTION TRANSISTOR AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17838894 titled 'CASCADED BIPOLAR JUNCTION TRANSISTOR AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a device and methods for forming the device. The device includes two bipolar junction transistors (BJTs) and an interconnect structure. The BJTs have different regions (base, emitter, and collector) and are placed adjacent to each other on a substrate. The interconnect structure includes conductive lines that connect the regions of the BJTs.
- The device includes two bipolar junction transistors (BJTs) placed adjacent to each other on a substrate.
- The BJTs have different regions - base, emitter, and collector.
- An interconnect structure is formed over the BJTs.
- The interconnect structure includes conductive lines that connect the regions of the BJTs.
Potential Applications
- Integrated circuits
- Electronics manufacturing
- Semiconductor devices
Problems Solved
- Simplifies the formation of a device with multiple BJTs.
- Provides a compact and efficient design for connecting the regions of the BJTs.
Benefits
- Improved performance and functionality of integrated circuits.
- Cost-effective manufacturing process.
- Compact design allows for smaller and more portable electronic devices.
Original Abstract Submitted
A device and methods of forming the same are described. The device includes a substrate and a first bipolar junction transistor (BJT) disposed over the substrate. The first BJT includes a first base region, a first emitter region, and a first collector region. The device further includes a second BJT disposed over the substrate adjacent the first BJT, and the second BJT includes a second base region, a second emitter region, and a second collector region. The device further includes an interconnect structure disposed over the first and second BJTs, and the interconnect structure includes a first conductive line electrically connected to the first emitter region and the second base region and a second conductive line electrically connected to the first collector region and the second collector region.
