17838551. SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES
Organization Name
Inventor(s)
Chulhong Park of Seongnam-si (KR)
SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17838551 titled 'SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES
Simplified Explanation
The patent application describes a semiconductor device with a specific structure and layout of components. Here is a simplified explanation of the abstract:
- The semiconductor device has an active region on a substrate, a gate electrode, a contact structure, and vias.
- The active region extends in one direction on the substrate.
- The gate electrode intersects the active region and extends in a perpendicular direction.
- The contact structure is located on one side of the gate electrode and extends in the same perpendicular direction.
- A first via is connected to the contact structure and has a longer length in the perpendicular direction than in the other direction.
- A plurality of first metal interconnections are provided on the first via, extending in the same direction as the active region.
- A second via is connected to the first metal interconnections and has a longer length in the perpendicular direction than in the other direction.
Potential applications of this technology:
- Semiconductor devices with improved performance and functionality.
- Integrated circuits with optimized layout and connectivity.
- Electronics for various industries such as consumer electronics, telecommunications, and automotive.
Problems solved by this technology:
- Efficient routing of electrical signals in a semiconductor device.
- Reduction of signal interference and noise.
- Enhanced integration and miniaturization of electronic components.
Benefits of this technology:
- Improved performance and reliability of semiconductor devices.
- Enhanced functionality and connectivity.
- Higher efficiency and reduced power consumption.
- Cost-effective manufacturing processes.
Original Abstract Submitted
A semiconductor device includes an active region extending on a substrate in a first direction, a gate electrode intersecting the active region and extending in a second direction, perpendicular to the first direction, a contact structure disposed on the active region on one side of the gate electrode and extending in the second direction, and a first via disposed on the contact structure to be connected to the contact structure and has a shape in which a length in the second direction is greater than a length in the first direction. A plurality of first metal interconnections are provided, which extend in the first direction on the first via, and are connected to the first via. A second via is provided, which is disposed on the plurality of first metal interconnections to be connected to the plurality of first metal interconnections and has a shape in which a length in the second direction is greater than a length in the first direction.