18279220. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Mitsubishi Electric Corporation)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Kunihiko Nishimura of Tokyo (JP)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18279220 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a substrate, a semiconductor layer, an element region, and fin transistors. The substrate has a principal surface, and the semiconductor layer is formed on this surface. The element region consists of unit element regions on the substrate's principal surface, and the fin transistors are located in the semiconductor layer within these unit element regions. The fin transistors extend radially from the center towards the outer periphery of the element region, with adjacent transistors having a specific angle spacing between them.
- Substrate with a principal surface
- Semiconductor layer formed on the principal surface
- Element region with unit element regions on the principal surface
- Fin transistors in the semiconductor layer within unit element regions
- Fin transistors extending radially from the center towards the outer periphery
- Specific angle spacing between adjacent fin transistors
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as high-performance computing, mobile devices, and communication systems.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the layout and design of fin transistors, leading to enhanced functionality and speed.
Benefits
The benefits of this technology include increased speed, improved power efficiency, and higher overall performance of semiconductor devices, resulting in better user experience and extended battery life for portable devices.
Potential Commercial Applications
The technology could be utilized in the production of next-generation processors, memory chips, and other semiconductor components for consumer electronics, industrial equipment, and automotive systems.
Possible Prior Art
One possible prior art in this field could be the development of finFET transistors, which have been widely used in modern semiconductor devices to improve performance and reduce power consumption.
Unanswered Questions
How does this technology compare to existing semiconductor device designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device designs to evaluate the performance and efficiency improvements offered by the described technology.
What are the potential challenges or limitations of implementing this technology in mass production?
The article does not address the potential challenges or limitations that may arise during the mass production and commercialization of semiconductor devices incorporating this technology.
Original Abstract Submitted
A semiconductor device includes a substrate, a semiconductor layer, an element region, and fin transistors. The substrate includes a principal surface. The semiconductor layer is formed as a surface layer or on the principal surface of the substrate, the surface layer being the principal surface of the substrate. The semiconductor layer has a crystal structure in which an angle between two of crystal orientations with equivalent relationships on a crystal plane having a correspondence with the principal surface of the substrate is 60 degrees or 120 degrees. The element region includes unit element regions formed on the principal surface of the substrate. The fin transistors are formed in the semiconductor layer, in the respective unit element regions. The fin transistors radially extend from a center toward an outer periphery of the element region. Adjacent two of the fin transistors have a spacing with a 60° angle or a 120° angle.
