18099236. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Yuan Chen of Hsinchu (TW)
Huan-Chieh Su of Changhua (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18099236 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The semiconductor device structure described in the abstract includes multiple regions and features that are arranged in a specific configuration to optimize performance and functionality. Here are some key points to explain the patent/innovation:
- Structure includes first and second source/drain regions, dielectric material, conductive contact, and conductive feature.
- Conductive contact is electrically connected to the conductive feature, which is disposed in the dielectric material.
- The top surface of the conductive feature is substantially coplanar with the top surface of the well portion.
- This configuration allows for efficient electrical connections and improved device performance.
Potential Applications
The technology described in this patent application could be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This technology solves the problem of optimizing the layout and configuration of semiconductor device structures to improve performance and functionality.
Benefits
The benefits of this technology include enhanced electrical connections, improved device performance, and increased efficiency in semiconductor manufacturing processes.
Potential Commercial Applications
The technology described in this patent application has potential commercial applications in the semiconductor industry, where high-performance and efficient devices are in demand.
Possible Prior Art
One possible prior art for this technology could be similar semiconductor device structures with different configurations or materials used in the construction.
Unanswered Questions
1. How does this semiconductor device structure compare to existing technologies in terms of performance and efficiency? 2. Are there any specific manufacturing processes or equipment required to implement this technology effectively?
Original Abstract Submitted
Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region disposed under a well portion, a second source/drain region disposed adjacent the first source/drain region, a dielectric material disposed between the first and second source/drain regions, and a conductive contact having a first portion disposed under the first source/drain region and a second portion disposed adjacent the first source/drain region. The second portion is disposed in the dielectric material. The structure further includes a conductive feature disposed in the dielectric material, and the conductive feature is electrically connected to the conductive contact. The conductive feature has a top surface that is substantially coplanar with a top surface of the well portion.
