18322234. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Jaeseoung Park of Suwon-si (KR)
Jeonghyuk Yim of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18322234 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the abstract includes a complex structure of conductive and insulating patterns that allow for efficient vertical connections within the device.
- The device includes a first conductive pattern on a substrate, surrounded by a second conductive pattern that covers a lower portion of the first pattern's sidewall.
- An upper insulating structure is then placed on top of the first and second conductive patterns.
- A vertical upper conductive pattern extends through the insulating structure, with a main plug portion overlapping the first and second conductive patterns and a vertical extension portion covering the upper portion of the first pattern's sidewall and overlapping the second conductive pattern.
Potential Applications
This technology could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.
Problems Solved
This innovation solves the problem of efficiently connecting different layers of conductive patterns within an integrated circuit device, allowing for improved performance and functionality.
Benefits
The benefits of this technology include enhanced vertical connectivity, increased circuit density, and improved overall performance of integrated circuit devices.
Potential Commercial Applications
Potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and research institutions developing cutting-edge electronic devices.
Possible Prior Art
One possible prior art related to this technology is the use of through-silicon vias (TSVs) in 3D integrated circuits to enable vertical connections between different layers of the device.
Unanswered Questions
How does this technology impact the overall power consumption of integrated circuit devices?
The abstract does not provide information on how this technology affects the power efficiency of integrated circuits.
Are there any limitations or challenges in implementing this technology on a large scale?
The abstract does not address any potential limitations or challenges that may arise when scaling up the production of integrated circuit devices using this technology.
Original Abstract Submitted
An integrated circuit device includes a first conductive pattern on a substrate, a second conductive pattern surrounding at least a portion of the first conductive pattern and covering a lower portion of a sidewall of the first conductive pattern, an upper insulating structure on the first conductive pattern and the second conductive pattern, and an upper conductive pattern extending in a vertical direction through the upper insulating structure. The upper conductive pattern includes a main plug portion overlapping the first conductive pattern and the second conductive pattern in the vertical direction, and a vertical extension portion extending from a local region of the main plug portion toward the substrate, the vertical extension portion covering an upper portion of the sidewall of the first conductive pattern and overlapping the second conductive pattern in the vertical direction.
