17453874. SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR simplified abstract (International Business Machines Corporation)
Contents
SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR
Organization Name
International Business Machines Corporation
Inventor(s)
ChoongHyun Lee of Chigasaki (JP)
Christopher J. Waskiewicz of Rexford NY (US)
CHANRO Park of CLIFTON PARK NY (US)
Alexander Reznicek of Troy NY (US)
SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17453874 titled 'SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR
Simplified Explanation
The abstract describes a semiconductor structure with specific components and arrangements. Here is a simplified explanation of the abstract:
- The semiconductor structure consists of a bottom source drain region placed on a substrate.
- A semiconductor channel region extends vertically upwards from the top surface of the bottom source drain region.
- A metal gate surrounds the semiconductor channel region.
- Above the semiconductor channel region, there is a top source drain region.
- A top contact is partially embedded into the top source drain region.
Potential applications of this technology:
- Integrated circuits: The semiconductor structure can be used in the fabrication of integrated circuits for various electronic devices.
- Transistors: The structure can be utilized in the production of transistors, which are fundamental components of electronic circuits.
- Power electronics: The technology may find applications in power electronics, enabling efficient control and conversion of electrical power.
Problems solved by this technology:
- Improved performance: The specific arrangement of the semiconductor structure may enhance the performance of electronic devices by optimizing the flow of electrical current.
- Miniaturization: The structure's design allows for smaller and more compact electronic components, enabling miniaturization of devices.
- Heat dissipation: The arrangement may help in dissipating heat generated during operation, preventing overheating and improving device reliability.
Benefits of this technology:
- Enhanced efficiency: The semiconductor structure's design can lead to improved energy efficiency in electronic devices.
- Higher integration density: The compact design allows for higher integration density, enabling more functionality in a smaller space.
- Improved reliability: The structure's optimized current flow and heat dissipation contribute to increased reliability and longevity of electronic devices.
Original Abstract Submitted
A semiconductor structure including a bottom source drain region arranged on a substrate; a semiconductor channel region extending vertically upwards from a top surface of the bottom source drain region; a metal gate disposed around the semiconductor channel region; a top source drain region above the semiconductor channel region; and a top contact partially embedded into the top source drain region.
