18177078. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yoichi Hori of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18177078 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a unique structure with a first electrode, a semiconductor layer, and a second electrode with specific regions and resin coverings. Here are some key points to explain the patent/innovation:
- The semiconductor device consists of a first electrode and a semiconductor layer with distinct regions.
- The second electrode is divided into a first portion and a thinner second portion, both located on the semiconductor layer.
- A first resin covers the second region of the semiconductor layer and the second portion of the second electrode.
- A second resin, different from the first resin, covers the entire second electrode and the first resin.
Potential Applications
This technology could be applied in various semiconductor devices, such as sensors, transistors, and integrated circuits.
Problems Solved
This innovation helps in improving the performance and reliability of semiconductor devices by providing a unique structure that enhances functionality and durability.
Benefits
The benefits of this technology include increased efficiency, better thermal management, and enhanced overall performance of semiconductor devices.
Potential Commercial Applications
This technology could find applications in the electronics industry for manufacturing advanced semiconductor devices with improved characteristics.
Possible Prior Art
One possible prior art could be the use of different resin materials to cover electrodes in semiconductor devices to enhance their performance and reliability.
What are the specific materials used for the first and second resin coverings in the semiconductor device?
The specific materials used for the first and second resin coverings are not mentioned in the abstract. Further details or specifications would be needed to determine the exact materials used.
How does the unique structure of the second electrode contribute to the overall functionality of the semiconductor device?
The abstract does not provide specific details on how the unique structure of the second electrode contributes to the functionality of the semiconductor device. Additional information or a detailed description of the device's operation would be required to answer this question accurately.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a first electrode and a semiconductor layer above the first electrode in a first direction. The semiconductor layer has a first region and a second region surrounding the first region in a first plane perpendicular to the first direction. A second electrode has a first portion and a second portion that is thinner than the first portion and surrounds the first portion. The first portion and the second portion are on the first region of the semiconductor layer. A first resin is on the second region and covers the second portion and an outer periphery of the first portion of the second electrode. A second resin covers the second electrode and the first resin and is a resin material different from the first resin.
