17521083. Single Process Double Gate and Variable Threshold Voltage MOSFET simplified abstract (International Business Machines Corporation)

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Single Process Double Gate and Variable Threshold Voltage MOSFET

Organization Name

International Business Machines Corporation

Inventor(s)

Sung Dae Suk of Watervliet NY (US)

Devendra K. Sadana of Pleasantville NY (US)

Tze-Chiang Chen of Yorktown Heights NY (US)

Single Process Double Gate and Variable Threshold Voltage MOSFET - A simplified explanation of the abstract

This abstract first appeared for US patent application 17521083 titled 'Single Process Double Gate and Variable Threshold Voltage MOSFET

Simplified Explanation

The abstract describes a patent application for a new type of MOSFET device that includes double gate/gate-all-around and variable threshold voltage features. The device is fabricated using a single backside process.

  • The MOSFET device includes a channel between source/drain regions.
  • It has at least one first gate on the front side of the device, with gate spacers offsetting the source/drain regions from the first gate.
  • It also has at least one second gate on the backside of the device, directly opposite the first gate.
  • The device can have at least one gate contact in direct contact with both the first and second gates.
  • The patent application also provides a method for forming the MOSFET device.

Potential Applications

  • This technology can be used in the fabrication of advanced semiconductor devices.
  • It can be applied in the development of high-performance integrated circuits.
  • The MOSFET device can be used in various electronic devices, such as smartphones, tablets, and computers.

Problems Solved

  • The invention solves the problem of limited performance and scalability of conventional MOSFET devices.
  • It addresses the need for improved control over the threshold voltage of the device.
  • The technology solves the challenge of fabricating double gate/gate-all-around MOSFET devices using a single backside process.

Benefits

  • The double gate/gate-all-around design provides enhanced control over the device's electrical characteristics.
  • The variable threshold voltage feature allows for better optimization of power consumption and performance.
  • The single backside process simplifies the fabrication process and reduces manufacturing costs.


Original Abstract Submitted

Double gate/gate-all-around and variable threshold voltage MOSFET devices and techniques for fabrication thereof in a single backside process are provided. In one aspect, a MOSFET device includes: a channel in between source/drain regions; at least one first gate disposed on a first side of the channel at a frontside of the MOSFET device; gate spacers offsetting the source/drain regions from the at least one first gate; and at least one second gate disposed on a second side of the channel directly opposite the at least one first gate at a backside of the MOSFET device. At least one gate contact can be present in direct contact with the at least one first gate and the at least one second gate. A method of forming a MOSFET device is also provided.

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