18177909. SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Kuan-Ting Pan of Taipei City (TW)
Wei-Yang Lee of Taipei City (TW)
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18177909 titled 'SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor structure described in the patent application includes a unique configuration of suspended channel members, gate structure, dielectric structure with porous material or air gap, and epitaxial layers. Here are some key points to explain the innovation:
- The semiconductor structure features a first channel member suspended over a substrate, with a second channel member suspended over the first channel member and spaced apart along a first direction.
- A gate structure wraps around the first and second channel members, along with a dielectric structure encircled by the channel members, gate structure, and source/drain structure.
- The dielectric structure includes a porous material or an air gap for specific functionality.
- A first epitaxial layer is attached to the first channel member, with a protruding portion extending into the dielectric structure.
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- Potential Applications
The semiconductor structure could be utilized in advanced electronic devices such as high-performance transistors, sensors, and memory devices.
- Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the structure for better electrical characteristics and thermal management.
- Benefits
- Enhanced device performance - Improved thermal dissipation - Potential for miniaturization and integration of components
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- Potential Commercial Applications of this Technology
The innovative semiconductor structure could find applications in the semiconductor industry for the development of next-generation electronic devices, leading to advancements in computing, communication, and sensor technologies.
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- Possible Prior Art
One possible prior art could be the use of suspended channel structures in semiconductor devices for improved electrical performance and reduced parasitic effects. However, the specific configuration and features described in this patent application may represent a novel approach to semiconductor design.
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- Unanswered Questions
- How does the presence of a porous material or air gap in the dielectric structure impact the overall performance of the semiconductor device?
The patent application mentions the inclusion of a porous material or air gap in the dielectric structure, but it does not delve into the specific effects or benefits of this design choice on the device performance.
- What manufacturing processes are involved in creating the suspended channel members and epitaxial layers in the semiconductor structure?
While the patent application describes the structure of the semiconductor device, it does not provide detailed information on the manufacturing techniques or processes required to fabricate the complex suspended channel members and epitaxial layers.
Original Abstract Submitted
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first channel member suspended over a substrate and a second channel member suspended over the first channel member and spaced apart from the first channel member along a first direction. The semiconductor structure also includes a gate structure wrapping around the first channel member and the second channel member and a dielectric structure encircled by the first channel member, the second channel member, the gate structure, and the source/drain structure. In addition, the dielectric structure includes a porous material or an air gap. The semiconductor structure also includes a first epitaxial layer attached to the first channel member, and the first epitaxial layer has a first extending portion protruding from a bottom surface of the first channel member along the first direction and extending into the dielectric structure.
