18360471. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sai-Hooi Yeong of Zhubei City (TW)
Chi-On Chui of Hsinchu-City (TW)
Chien-Ning Yao of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360471 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The abstract describes a semiconductor device structure that includes a transistor, a capacitor, and gate spacer layers. The transistor has a source/drain feature adjoining an active region and a gate stack over the active region. The capacitor is positioned above the transistor and consists of a bottom electrode layer on the gate stack and a ferroelectric layer made of a Hf-based dielectric material on the bottom electrode layer. The gate spacer layers surround the gate stack, bottom electrode layer, and ferroelectric layer.
- The semiconductor device structure includes a transistor with a source/drain feature and a gate stack.
- A capacitor is positioned above the transistor, consisting of a bottom electrode layer and a ferroelectric layer made of a Hf-based dielectric material.
- Gate spacer layers surround the gate stack, bottom electrode layer, and ferroelectric layer.
Potential Applications
- This semiconductor device structure can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be applied in memory devices, logic circuits, and other semiconductor-based technologies.
Problems Solved
- The use of a Hf-based dielectric material in the ferroelectric layer provides improved performance and reliability compared to other materials.
- The gate spacer layers help to protect and isolate the transistor, capacitor, and other components, enhancing the overall functionality and lifespan of the device.
Benefits
- The use of a ferroelectric layer made of a Hf-based dielectric material in the capacitor improves the efficiency and stability of the device.
- The gate spacer layers provide additional protection and isolation, leading to enhanced performance and durability.
- This semiconductor device structure offers potential advancements in memory technology and other semiconductor applications.
Original Abstract Submitted
A semiconductor device structure is provided. The semiconductor device structure includes a transistor which includes a source/drain feature adjoining an active region, and a gate stack over the active region. The semiconductor device structure further includes a capacitor above the transistor, the capacitor including a bottom electrode layer on the gate stack and a ferroelectric layer on the bottom electrode layer. The ferroelectric layer is made of a Hf-based dielectric material. The semiconductor device structure further includes gate spacer layers surrounding the gate stack, the bottom electrode layer and the ferroelectric layer.
