17834240. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hyo-Jin Kim of Bucheon-si (KR)

Daewon Ha of Seoul (KR)

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17834240 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a three-dimensional semiconductor device and its fabrication methods. The device includes multiple active regions, source/drain patterns, channel patterns, active contacts, and a gate electrode. It also includes power lines and a metal layer.

• The device includes a first active region with a source/drain pattern and a channel pattern connected to it.
• A first active contact is present on the first source/drain pattern.
• A second active region is located on the first active region and the first active contact, with a second source/drain pattern and a second channel pattern connected to it.
• A second active contact is present on the second source/drain pattern.
• A gate electrode extends vertically from the first channel pattern towards the second channel pattern.
• The device also includes first and second power lines below the first active region.
• A first metal layer is present on the gate electrode and the second active contact.

Potential applications of this technology:

• Semiconductor devices with improved performance and functionality.
• Three-dimensional integrated circuits for advanced electronics.
• High-density memory devices for data storage.

Problems solved by this technology:

• Enables the fabrication of complex three-dimensional semiconductor devices.
• Provides a compact and efficient design for integrated circuits.
• Enhances the performance and functionality of semiconductor devices.

Benefits of this technology:

• Improved performance and functionality of semiconductor devices.
• Increased integration density for more compact and efficient circuits.
• Enhanced data storage capabilities in high-density memory devices.

Original Abstract Submitted

Disclosed are three-dimensional semiconductor device and their fabrication methods. The device includes a first active region on a substrate and including a first source/drain pattern and a first channel pattern connected to the first source/drain pattern, a first active contact on the first source/drain pattern, a second active region on the first active region and the first active contact and including a second source/drain pattern and a second channel pattern connected to the second source/drain pattern, a second active contact on the second source/drain pattern, a gate electrode that vertically extends from the first channel pattern toward the second channel pattern, a first power line and a second power line that are below the first active region, and a first metal layer on the gate electrode and the second active contact.