17461578. SOURCE/DRAIN STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SOURCE/DRAIN STRUCTURES
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chen-Ming Lee of Taoyuan County (TW)
Wei-Yang Lee of Taipei City (TW)
SOURCE/DRAIN STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17461578 titled 'SOURCE/DRAIN STRUCTURES
Simplified Explanation
The abstract describes a semiconductor structure and a method of forming it. The structure includes multiple channel members, gate structures, and a frontside source contact.
- The semiconductor structure consists of two sets of channel members and gate structures.
- Each set of channel members is wrapped around by a corresponding gate structure.
- A frontside source contact is positioned between the two sets of channel members and gate structures.
Potential Applications
This technology could be applied in various fields, including:
- Electronics manufacturing
- Semiconductor industry
- Integrated circuit design
Problems Solved
The semiconductor structure and method of forming it address the following issues:
- Efficient channel control in a semiconductor device
- Enhanced performance and functionality of integrated circuits
- Improved manufacturing processes for semiconductor devices
Benefits
The use of this semiconductor structure and method offers several advantages:
- Better control and manipulation of channel members
- Increased performance and functionality of semiconductor devices
- Streamlined manufacturing processes for integrated circuits
Original Abstract Submitted
A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members, a second plurality of channel members, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a frontside source contact disposed between the first plurality of channel members and the second plurality of channel members as well as between the first gate structure and the second gate structure.
