18370144. WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES simplified abstract (SKYWORKS SOLUTIONS, INC.)
Contents
- 1 WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES
Organization Name
Inventor(s)
Guillaume Alexandre Blin of Carlisle MA (US)
WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18370144 titled 'WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES
Simplified Explanation
The patent application describes a transistor with two active regions and gate electrode fingers positioned over each active region.
- The transistor comprises a first source region, a first drain region, a first active region, a second drain region, a second active region, and gate electrode fingers.
- The first and second active regions have non-parallel directions of greatest extension.
- The first gate electrode finger is positioned over the first active region, and the second gate electrode finger is positioned over the second active region.
Potential Applications
This technology could be applied in the development of high-performance electronic devices such as transistors for use in integrated circuits.
Problems Solved
This technology helps in improving the efficiency and performance of transistors by optimizing the layout and design of the active regions and gate electrodes.
Benefits
The benefits of this technology include enhanced transistor performance, increased speed, and improved reliability in electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of advanced semiconductor devices for various industries such as telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the development of transistors with multiple active regions and gate electrodes in the field of semiconductor device manufacturing.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing transistor designs to evaluate the advantages and disadvantages of this new technology.
What are the specific manufacturing processes involved in producing transistors with non-parallel active regions and gate electrodes?
The article does not delve into the detailed manufacturing processes required to implement this innovative transistor design.
Original Abstract Submitted
A transistor comprising a first source region, a first drain region disposed on a first side of the first source region, a first active region being formed between the first source region and the first drain region, a second drain region disposed on a second side of the first source region, a second active region being formed between the first source region and the second drain region, directions of greatest extension of the first and second active regions being non-parallel, a first gate electrode finger disposed over the first active region, and a second gate electrode finger disposed over the second active region.
