18204449. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18204449 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes the following components:
- Active region: This is a region on the substrate where the device operates.
- Channel layers: Multiple layers are present on the active region, spaced apart from each other in a vertical direction.
- Gate structure: This structure intersects the active region and the channel layers, extending in a second direction that crosses the first direction. It surrounds the channel layers.
- Inner spacer layers: These layers are on both sides of the gate structure in the first direction and on the lower surfaces of the channel layers.
- Protective layer: This layer is in contact with the inner spacer layers, channel layers, and active region.
- Source/drain region: This region is on at least one side of the gate structure and in contact with the inner spacer layers.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in power electronics for efficient energy conversion.
- The device can find applications in the automotive industry for advanced driver assistance systems (ADAS) and electric vehicles.
Problems solved by this technology:
- The device design allows for better control of the flow of electrical current, leading to improved performance and efficiency.
- The vertical arrangement of the channel layers enables higher integration density and reduces the footprint of the device.
- The protective layer provides enhanced durability and reliability to the device.
Benefits of this technology:
- Improved performance and efficiency of electronic devices.
- Higher integration density, allowing for more functionality in a smaller space.
- Enhanced durability and reliability, leading to longer device lifespan.
Original Abstract Submitted
A semiconductor device includes an active region extending in a first direction on a substrate; a plurality of channel layers on the active region and spaced apart from each other in a vertical direction that is perpendicular to the first direction; a gate structure on the substrate, the gate structure intersecting the active region and the plurality of channel layers, extending in a second direction crossing the first direction, and respectively surrounding the plurality of channel layers; inner spacer layers on both sides of the gate structure in the first direction, and on respective lower surfaces of the plurality of channel layers; a protective layer in contact with the inner spacer layers, the plurality of channel layers, and the active region; and a source/drain region on the active region, on at least one side of the gate structure, and in contact with the inner spacer layers.
