18231594. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the concentration of the first element affect the performance of the semiconductor device?
- 1.11 What specific electronic applications could benefit the most from this technology?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Sang Yong Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18231594 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes an active pattern with a lower pattern and multiple sheet patterns, a gate structure with a gate electrode and gate insulating film, and an interfacial insulating film with a first vertical portion and a horizontal portion. The first vertical portion has a larger dimension in one direction than the horizontal portion and includes areas with different concentrations of a first element other than silicon.
- Lower pattern and sheet patterns in active pattern
- Gate structure with gate electrode and gate insulating film
- Interfacial insulating film with first vertical portion and horizontal portion
- Differential concentration of first element in different areas of the device
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as smartphones, computers, and other consumer electronics.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the gate structure design and the composition of the interfacial insulating film, leading to enhanced device characteristics.
Benefits
The benefits of this technology include increased device performance, improved reliability, and potentially lower power consumption in electronic devices utilizing these semiconductor components.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of high-performance integrated circuits and other electronic components, catering to the growing demand for advanced semiconductor devices.
Possible Prior Art
One possible prior art in this field could be the development of similar gate structures and interfacial insulating films in semiconductor devices, but with different compositions or configurations.
Unanswered Questions
How does the concentration of the first element affect the performance of the semiconductor device?
The abstract mentions a differential concentration of a first element in different areas of the device. It would be interesting to know how this variation impacts the overall performance and functionality of the semiconductor device.
What specific electronic applications could benefit the most from this technology?
While the abstract mentions potential applications in smartphones, computers, and consumer electronics, it would be helpful to understand which specific electronic devices or systems could see the most significant improvements from the implementation of this technology.
Original Abstract Submitted
A semiconductor device includes an active pattern including: a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction; a gate structure on the lower pattern and including a gate electrode and a gate insulating film including an interfacial insulating film including a first vertical portion and a horizontal portion. A dimension in a third direction of the first vertical portion is greater than a dimension in the second direction of the horizontal portion. The first vertical portion includes: a first area contacting a source/drain pattern; and a second area provided between the first area and the gate electrode. The interfacial insulating film includes a first element other than silicon, wherein a concentration of the first element in the first area is greater than a concentration of the first element in the second area.
