18334849. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Myung Il Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18334849 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes various components such as a substrate, sheet patterns, gate electrode, source/drain patterns, contact blocking pattern, and source/drain contacts. Here are the key points of the innovation:
- Substrate with sheet patterns and gate electrode
- Source/drain patterns connected to sheet patterns
- Contact blocking pattern below second source/drain pattern
- Source/drain contacts extending in a first direction
- Depth difference between gate electrode and source/drain contact
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the contact structure between the source/drain patterns and the gate electrode, reducing parasitic resistance, and enhancing overall device reliability.
Benefits
The benefits of this technology include increased device performance, lower power consumption, improved signal transmission, and enhanced durability of semiconductor devices.
Potential Commercial Applications
The innovative semiconductor device technology could find commercial applications in the semiconductor industry for the production of high-performance electronic devices, leading to advancements in computing, telecommunications, and consumer electronics.
Possible Prior Art
One possible prior art in this field could be the development of similar contact structures in semiconductor devices to improve device performance and reliability. Research and patents related to optimizing contact structures in semiconductor devices may exist in the prior art.
Unanswered Questions
How does this technology compare to existing contact structures in semiconductor devices?
The article does not provide a direct comparison with existing contact structures in semiconductor devices to highlight the specific advantages of the innovation.
What are the specific performance improvements achieved by this technology in semiconductor devices?
The article does not detail the exact performance enhancements, such as speed, power efficiency, or reliability, achieved by implementing this contact structure in semiconductor devices.
Original Abstract Submitted
A semiconductor device includes a substrate, a first sheet pattern on the substrate, a gate electrode on the substrate and surrounding the first sheet pattern, a first source/drain pattern and a second source/drain pattern respectively connected to a first end and a second end of the first sheet pattern, a contact blocking pattern on a lower side of the second source/drain pattern, a first source/drain contact extending in a first direction and connected to the first source/drain pattern, and a second source/drain contact connected to the second source/drain pattern and extending in the first direction to contact an upper surface of the contact blocking pattern. A depth from an upper surface of the gate electrode to a lowermost portion of the first source/drain contact may be greater than a depth from the upper surface of the gate electrode to the upper surface of the contact blocking pattern.
