17838637. DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES simplified abstract (Intel Corporation)

DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES

Organization Name

Intel Corporation

Inventor(s)

Rohit Galatage of Hillsoboro OR (US)

Willy Rachmady of Beaverton OR (US)

Cheng-Ying Huang of Hillsboro OR (US)

Jami A. Wiedemer of Scappoose OR (US)

Munzarin F. Qayyum of Hillsboro OR (US)

Nicole K. Thomas of Portland OR (US)

Patrick Morrow of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

Mauro J. Kobrinsky of Portland OR (US)

DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17838637 titled 'DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES

Simplified Explanation

The abstract describes an integrated circuit structure that includes two stacked devices. The first device has a source or drain region, a source or drain contact, and a layer of metal and semiconductor materials between them. The second device also has a source or drain region, a source or drain contact, and a layer of metal and semiconductor materials between them. The metals used in the first and second devices are different.

• The patent application describes an integrated circuit structure with stacked devices.
• The first device has a source or drain region, a source or drain contact, and a metal-semiconductor layer.
• The second device also has a source or drain region, a source or drain contact, and a metal-semiconductor layer.
• The metals used in the first and second devices are different.

Potential Applications

• This technology can be used in various electronic devices that require compact and efficient integrated circuits.
• It can be applied in mobile devices, computers, and other electronic systems that require high-performance integrated circuits.

Problems Solved

• The integrated circuit structure solves the problem of limited space in electronic devices by stacking multiple devices vertically.
• It addresses the need for efficient and compact integrated circuits that can perform complex functions.

Benefits

• The stacked structure allows for increased functionality and performance in integrated circuits.
• It enables the integration of multiple devices in a smaller footprint, saving space in electronic devices.
• The use of different metals in the devices allows for optimized performance and functionality.

Original Abstract Submitted

An integrated circuit structure includes a second device stacked vertically above a first device. The first device includes (i) a first source or drain region, (ii) a first source or drain contact coupled to the first source or drain region, and (iii) a first layer comprising a first metal and first one or more semiconductor materials between at least a section of the first source or drain region and the first source or drain contact. The second device includes (i) a second source or drain region, (ii) a second source or drain contact coupled to the second source or drain region, and (iii) a second layer comprising a second metal and second one or more semiconductor materials between at least a section of the second source or drain region and the second source or drain contact. In an example, the first metal and the second metal are different.