17887306. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Kuo-Hua Pan of Hsinchu City (TW)
Chih-Hao Chang of Hsin-chu (TW)
Jhon-Jhy Liaw of Zhudong Township (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17887306 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The semiconductor structure described in the patent application includes a gate structure, a first source/drain (S/D) structure, an S/D contact structure, and a dielectric wall.
- The gate structure is formed over a substrate.
- The first S/D structure is formed adjacent to the gate structure.
- The S/D contact structure is formed over the first S/D structure.
- The dielectric wall is formed below the gate structure and the S/D contact structure, with a first portion directly below the S/D contact structure and a second portion directly below the gate structure.
- The first portion of the dielectric wall has a smaller height along a vertical direction compared to the second portion.
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems solved by this technology:
- Improving performance and efficiency of semiconductor devices
- Enhancing the reliability of semiconductor structures
- Reducing leakage currents in semiconductor devices
Benefits of this technology:
- Better control over the flow of current in semiconductor devices
- Enhanced functionality and speed of electronic devices
- Increased durability and longevity of semiconductor structures
Original Abstract Submitted
Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a gate structure formed over a substrate, and a first source/drain (S/D) structure formed adjacent to the gate structure. The semiconductor structure includes an S/D contact structure formed over the first S/D structure, and a dielectric wall formed below the gate structure and the S/D contact structure. The dielectric wall has a first portion directly below the S/D contact structure and a second portion directly below the gate structure, the first portion has a first height along a vertical direction, the second portion has a second height along the vertical direction, and the first height is smaller than the second height.
