17766319. VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME simplified abstract (Robert Bosch GmbH)

VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME

Organization Name

Robert Bosch GmbH

Inventor(s)

Jens Baringhaus of Sindelfingen (DE)

Daniel Krebs of Aufhausen (DE)

Dick Scholten of Stuttgart (DE)

VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17766319 titled 'VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME

Simplified Explanation

The patent application describes a vertical field-effect transistor with a limiting structure to control the conductive channel in the semiconductor fin.

• Drift region with first conductivity type
• Semiconductor fin on or over the drift region
• Source/drain electrode on or over the semiconductor fin
• Electrically conductive region in the semiconductor fin connecting the source/drain electrode to the drift region
• Limiting structure formed laterally next to the electrically conductive region to limit the conductive channel in the semiconductor fin

1. 1. 1. Potential Applications

• Power electronics
• Integrated circuits
• High-frequency applications

1. 1. 1. Problems Solved

• Controlling the conductive channel in the semiconductor fin
• Enhancing the performance of the vertical field-effect transistor
• Improving efficiency and reliability of electronic devices

1. 1. 1. Benefits

• Better control over the transistor operation
• Increased efficiency in power management
• Enhanced performance in high-frequency applications

Original Abstract Submitted

A vertical field-effect transistor. The transistor includes: a drift region having a first conductivity type; a semiconductor fin on or over the drift region; and a source/drain electrode on or over the semiconductor fin, the semiconductor fin having an electrically conductive region that connects the source/drain electrode to the drift region in electrically conductive fashion, and having a limiting structure that is formed laterally next to the electrically conductive region and that extends from the source/drain electrode to the drift region, the limiting structure being set up to limit a conductive channel of the vertical field-effect transistor in the semiconductor fin to the area of the electrically conductive region.