18373360. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT simplified abstract (SKYWORKS SOLUTIONS, INC.)
Contents
- 1 WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT
Organization Name
Inventor(s)
Guillaume Alexandre Blin of Carlisle MA (US)
WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18373360 titled 'WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT
Simplified Explanation
The abstract describes a field effect transistor integrated within a transistor area, featuring a contact configuration with interleaved contact fingers connected to a source contact via through wafer vias staggered at alternating ends.
- The field effect transistor is integrated within a transistor area.
- The contact configuration includes interleaved contact fingers.
- The contact fingers are connected to a source contact via through wafer vias.
- The through wafer vias are staggered at alternating ends of the source contact fingers.
Potential Applications
This technology could be applied in:
- Integrated circuits
- Semiconductor devices
- Electronics manufacturing
Problems Solved
This technology helps address issues related to:
- Contact resistance in field effect transistors
- Efficient use of space in transistor areas
- Enhancing performance of integrated circuits
Benefits
The benefits of this technology include:
- Improved conductivity
- Enhanced reliability
- Increased efficiency in electronic devices
Potential Commercial Applications
A potential commercial application for this technology could be in:
- Semiconductor industry
- Consumer electronics market
- Telecommunications sector
Possible Prior Art
One possible prior art for this technology could be:
- Previous field effect transistor designs with different contact configurations
Unanswered Questions
How does this technology compare to traditional field effect transistor designs?
This article does not provide a direct comparison between this technology and traditional field effect transistor designs.
What specific electronic devices could benefit the most from this technology?
The article does not specify which electronic devices could benefit the most from the implementation of this technology.
Original Abstract Submitted
Disclosed is a field effect transistor integrated within an associated transistor area, the field effect transistor comprising: a contact configuration with interleaved contact fingers including a number of source contact fingers connected to a source contact by through wafer vias staggered at alternating ends of the source contact fingers.
