18368725. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18368725 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes an active pattern on a substrate with first and second regions, first and second source/drain regions on the first and second regions, first and second source/drain contacts on the first and second source/drain regions, and a separation structure intersecting the active pattern between the first and second source/drain contacts. The separation structure extends into the active pattern between the first and second source/drain regions, with an asymmetrical structure having an upper surface of a first portion adjacent to the first source/drain contact higher than an upper surface of a second portion adjacent to the second source/drain contact.
- The semiconductor device has an active pattern on a substrate with source/drain regions and source/drain contacts.
- A separation structure intersects the active pattern between the source/drain contacts, extending into the active pattern between the source/drain regions.
- The separation structure has an asymmetrical structure with different heights on the upper surfaces of its portions.
Potential Applications
The technology described in the patent application could be applied in:
- Semiconductor manufacturing
- Integrated circuit design
- Electronic devices
Problems Solved
This technology helps in:
- Improving the performance of semiconductor devices
- Enhancing the efficiency of source/drain contact structures
Benefits
The benefits of this technology include:
- Better control of current flow in semiconductor devices
- Increased reliability and stability of electronic components
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be:
- Previous patents related to source/drain contact structures in semiconductor devices
Unanswered Questions
How does the asymmetrical structure of the separation structure impact the overall performance of the semiconductor device?
The asymmetrical structure of the separation structure may affect the electrical properties and efficiency of the device, but the specific details of this impact are not provided in the abstract.
What specific manufacturing processes are required to implement the separation structure in the semiconductor device?
The abstract does not mention the specific manufacturing processes involved in implementing the separation structure, leaving a gap in understanding the practical aspects of this technology.
Original Abstract Submitted
A semiconductor device includes an active pattern on a substrate with first and second regions; first and second source/drain regions on the first and second regions; first and second source/drain contacts on the first and second source/drain regions; and a separation structure intersecting the active pattern between the first and second source/drain contacts, and extending into the active pattern between the first and second source/drain regions, wherein an upper surface of the second source/drain contact is higher than an upper surface of the first source/drain contact, and wherein the separation structure has an asymmetrical structure having an upper surface of a first portion adjacent to the first source/drain contact higher than an upper surface of a second portion adjacent to the second source/drain contact.
