17936990. CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION simplified abstract (Intel Corporation)

CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION

Organization Name

Intel Corporation

Inventor(s)

Sourav Dutta of Hillsboro OR (US)

Nazila Haratipour of Portland OR (US)

Vachan Kumar of Hillsboro OR (US)

Uygar E. Avci of Portland OR (US)

Shriram Shivaraman of Hillsboro OR (US)

Sou-Chi Chang of Portland OR (US)

CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17936990 titled 'CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION

Simplified Explanation

The abstract describes a semiconductor device with an integrated capacitor structure connected to the source or drain region of the device. The capacitor structure includes a ferroelectric layer between electrodes.

• One or more semiconductor regions extend between corresponding source or drain regions in a semiconductor device.
• A gate structure extends over the semiconductor regions in a different direction.
• The capacitor structure is integrated with one of the source or drain regions, with one electrode contacting the region and the other electrode connected to a conductive contact above the structure.
• The capacitor structure may include a ferroelectric layer for enhanced performance.

Potential Applications

The technology described in this patent application could be applied in various electronic devices such as memory modules, processors, and sensors.

Problems Solved

This innovation solves the problem of limited space in semiconductor devices by integrating a capacitor structure with the source or drain region, allowing for more efficient use of space on the chip.

Benefits

The integrated capacitor structure provides improved performance and functionality in semiconductor devices, leading to enhanced overall device performance and efficiency.

Potential Commercial Applications

The technology could be utilized in the production of advanced electronic devices, leading to improved performance and functionality in various consumer electronics and industrial applications.

Possible Prior Art

One possible prior art for this technology could be the integration of capacitors in semiconductor devices, but the specific integration with the source or drain region as described in this patent application may be novel.

Unanswered Questions

How does the integration of the capacitor structure with the source or drain region impact the overall performance of the semiconductor device?

The article does not provide specific details on how the integration of the capacitor structure with the source or drain region affects the performance of the semiconductor device.

Are there any limitations or drawbacks to integrating the capacitor structure in this manner?

The potential limitations or drawbacks of integrating the capacitor structure with the source or drain region are not addressed in the article.

Original Abstract Submitted

Techniques are provided herein to form a semiconductor device that has a capacitor structure integrated with the source or drain region of the semiconductor device. A given semiconductor device includes one or more semiconductor regions extending in a first direction between corresponding source or drain regions. A gate structure extends in a second direction over the one or more semiconductor regions. A capacitor structure is integrated with one of the source or drain regions of the integrated circuit such that a first electrode of the capacitor contacts the source or drain region and a second electrode of the capacitor contacts a conductive contact formed over the capacitor structure. The capacitor structure may include a ferroelectric capacitor having a ferroelectric layer between the electrodes.