17848660. VARACTOR DEVICE WITH BACKSIDE ELECTRICAL CONTACT simplified abstract (Intel Corporation)

VARACTOR DEVICE WITH BACKSIDE ELECTRICAL CONTACT

Organization Name

Intel Corporation

Inventor(s)

Ayan Kar of Portland OR (US)

Kalyan C. Kolluru of Portland OR (US)

Nicholas A. Thomson of Hillsboro OR (US)

Vijaya Bhaskara Neeli of Portland OR (US)

Said Rami of Portland OR (US)

Saurabh Morarka of Portland OR (US)

Karthik Krishaswamy of Portland OR (US)

Mauro J. Kobrinsky of Portland OR (US)

VARACTOR DEVICE WITH BACKSIDE ELECTRICAL CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17848660 titled 'VARACTOR DEVICE WITH BACKSIDE ELECTRICAL CONTACT

Simplified Explanation

The abstract describes a varactor device that includes various components such as a support structure, semiconductor structures, contact structures, and a semiconductor region. These components work together to create a varactor device with specific functionalities.

• The varactor device includes a support structure and an electrically conductive layer at the backside of the support structure.
• Two semiconductor structures, made of doped semiconductor materials, are present in the device.
• Two contact structures, which are electrically conductive, are connected to the semiconductor structures.
• One of the contact structures connects the corresponding semiconductor structure to the electrically conductive layer.
• A semiconductor region is located between the two semiconductor structures and can be connected to both of them.
• The semiconductor region may consist of non-planar semiconductor structures coupled with a gate.
• The gate is connected to another electrically conductive layer at the frontside of the support structure.
• The varactor device may also include a pair of additional semiconductor regions that are electrically insulated from each other.
• These additional semiconductor regions can be coupled to two oppositely polarized gates, respectively.

Potential Applications

• The varactor device can be used in various electronic circuits and systems that require voltage-controlled capacitance.
• It can be utilized in frequency synthesizers, voltage-controlled oscillators, and tunable filters.
• The device can also find applications in wireless communication systems, radar systems, and other RF/microwave applications.

Problems Solved

• The varactor device solves the problem of providing voltage-controlled capacitance in electronic circuits.
• It addresses the need for tunable components that can adjust their capacitance based on the applied voltage.
• The device offers a compact and efficient solution for voltage-controlled capacitance requirements.

Benefits

• The varactor device provides a high level of control over capacitance, allowing for precise tuning and adjustment.
• It offers a compact and integrated design, reducing the need for additional components.
• The device can operate at high frequencies, making it suitable for RF/microwave applications.
• It provides improved performance and reliability compared to traditional varactor devices.

Original Abstract Submitted

A varactor device includes a support structure, an electrically conductive layer at the backside of the support structure, two semiconductor structures including doped semiconductor materials, two contact structures, and a semiconductor region. Each contract structure is electrically conductive and is connected to a different one of the semiconductor structures A contract structure couples the corresponding semiconductor structure to the electrically conductive layer. The semiconductor region is between the two semiconductor structures and can be connected to the two semiconductor structures. The semiconductor region may include non-planar semiconductor structures coupled with a gate. The gate may be coupled to another electrically conductive layer at the frontside of the support structure. The varactor device may further include a pair of additional semiconductor regions that are electrically insulated from each other. The additional semiconductor regions may be coupled to two oppositely polarized gates, respectively.