18106812. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jia-Chuan You of Taoyuan County (TW)
Chia-Hao Chang of Hsinchu City (TW)
Kuo-Cheng Chiang of Hsinchu County (TW)
Chin-Hao Wang of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18106812 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device involving the formation of a gate electrode structure with insulating spacers, an interlayer dielectric layer, and filling trenches with an insulating material.
- Gate electrode structure formed over a channel region
- Gate dielectric layer over the channel region
- Gate electrode and insulating spacers on opposing sidewalls
- Interlayer dielectric layer over insulating spacers
- Removal of insulating spacers to form trenches
- Filling trenches with insulating material
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by providing better isolation and reducing parasitic capacitance.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and improved overall device reliability.
Potential Commercial Applications
The technology described in this patent application could have potential commercial applications in the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar insulating spacers and trench filling techniques in the manufacturing of semiconductor devices.
Unanswered Questions
How does this technology compare to existing methods in terms of cost-effectiveness?
The cost-effectiveness of this technology compared to existing methods is not addressed in the abstract. It would be interesting to know if this new method is more cost-effective in the long run.
What impact does this technology have on the overall power consumption of semiconductor devices?
The abstract does not mention the impact of this technology on power consumption. It would be valuable to understand if this method helps in reducing power consumption in semiconductor devices.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a gate electrode structure over a channel region, wherein the gate electrode structure includes a gate dielectric layer disposed over the first channel region, a gate electrode disposed over the gate dielectric layer, and insulating spacers disposed over opposing sidewalls of the gate electrode, wherein the gate dielectric layer is disposed over opposing sidewalls of the gate electrode. An interlayer dielectric layer is formed over opposing sidewalls of the insulating spacers. The insulating spacers are removed from an upper portion of the opposing sidewalls of the gate electrode to form trenches between the opposing sidewalls of the upper portion of the gate electrode and the interlayer dielectric layer, and the trenches are filled with an insulating material.
