Category:H01L29/06
- **Section H**: Electricity
- **Class H01**: Basic Electric Elements
- **Subclass H01L**: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- **Main Group H01L29/00**: Semiconductor devices adapting junction formation for particular applications
- **Subgroup H01L29/06**: Active solid-state devices, e.g., transistors, solid-state diodes
- Inventors in H01L29/06:
1. **William Shockley**: Known for the invention of the transistor. 2. **John Bardeen and Walter Brattain**: Co-inventors of the first point-contact transistor.
- Prominent Organizations:
1. **Intel Corporation**: A leader in semiconductor technology, especially in the field of microprocessors. 2. **Samsung Electronics**: Known for large-scale manufacturing and innovation in semiconductors.
- Lesser-Known Organizations:
1. **Micron Technology**: Specializes in memory and storage solutions. 2. **NXP Semiconductors**: Focuses on automotive and embedded processing solutions. 3. **Infineon Technologies**: Known for semiconductor and system solutions addressing automotive, industrial power control, and security applications. 4. **ASM International**: A supplier of semiconductor process equipment for wafer processing.
Pages in category "H01L29/06"
The following 200 pages are in this category, out of 830 total.
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- 17958285. WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
- 17958290. WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract (Intel Corporation)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
- 17958362. TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract (Intel Corporation)
- 17960116. INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract (International Business Machines Corporation)
- 17960277. SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17961281. Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract (International Business Machines Corporation)
- 17962222. HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS simplified abstract (Tokyo Electron Limited)
- 17962233. 3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS simplified abstract (Tokyo Electron Limited)
- 17962235. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Tokyo Electron Limited)
- 17963031. SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION simplified abstract (International Business Machines Corporation)
- 17963591. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17970777. SEMICONDUCTOR DEVICE HAVING STEPPED MULTI-STACK TRANSISTOR STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 17977420. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 17984042. 3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18045181. FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE simplified abstract (International Business Machines Corporation)
- 18046518. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18046656. SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF CHANNEL LAYERS simplified abstract (Samsung Electronics Co., Ltd.)
- 18048877. ISOLATION RAIL BETWEEN BACKSIDE POWER RAILS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18049297. SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18053157. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18077281. INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT simplified abstract (Samsung Electronics Co., Ltd.)
- 18081855. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18088890. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18093877. INTEGRATED CIRCUITS AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18094597. FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN) simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18097057. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097249. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097263. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18099236. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18100872. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18101254. SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18102204. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18103897. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18108089. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18108089. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18110488. POWER MANAGEMENT INTEGRATED CIRCUIT AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18110950. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18113715. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18119037. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18121869. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18125411. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18125870. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18128061. Epitaxial Structures In Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18128417. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18130732. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18133276. POWER DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18138877. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18139985. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18140523. SINGULATED SEMICONDUCTOR DEVICES AND ASSOCIATED METHODS simplified abstract (Micron Technology, Inc.)
- 18140905. INTEGRATED CIRCUIT DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18141990. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18149128. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18150474. Transistor Gate Structures and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18150524. Transistor Source/Drain Regions and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151575. METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151761. NANO-FET SEMICONDUCTOR DEVICE AND METHOD OF FORMING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151792. FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151991. SHARED BIT LINES FOR MEMORY CELLS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152169. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152477. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18152775. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18152938. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153335. SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18153646. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18154275. SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18154614. SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18155054. SCHOTTKY DIODE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18155392. Gate All Around Transistor Device and Fabrication Methods Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18155536. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18155917. ISOLATION FOR LONG AND SHORT CHANNEL DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18157054. METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157461. MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18158148. DUAL SIDE CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18158263. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18158641. Semiconductor Device and Method of Manufacture simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18159200. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18159625. MULTI-GATE DEVICE INNER SPACER AND METHODS THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18159989. TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18160002. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18160002. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18160341. INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18162892. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18163573. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18163857. FIELD EFFECT TRANSISTOR WITH GATE ISOLATION STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18164426. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18165635. SEMICONDUCTOR MEMORY DEVICES WITH BACKSIDE HEATER STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18165639. NANOSHEET DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18166521. INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18167169. TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18167718. MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18168504. COMPLEMENTARY FIELD EFFECT TRANSISTOR WITH CONDUCTIVE THROUGH SUBSTRATE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18169597. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18169628. SEMICONDUCTOR STRUCTURE WITH HIGH INTEGRATION DENSITY AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18170259. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18170482. FIELD EFFECT TRANSISTOR WITH ISOLATION STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18171754. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18172703. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18173847. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18176170. SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18177245. SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177313. SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177409. Semiconductor Structures With Reduced Parasitic Capacitance And Methods For Forming The Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18177909. SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18181750. MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18184901. INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18185941. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18186206. SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18188314. Crystallization of High-K Dielectric Layer simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18188399. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18190444. INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18190837. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18193758. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18195074. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18195657. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18195749. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18196081. SEMICONDUCTOR DEVICES HAVING DIFFERENT IMPURITY REGIONS IN ACTIVE PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18196191. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18197428. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18199014. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18199115. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18199133. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18199516. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18200248. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18201878. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18204449. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18212817. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18214861. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18219232. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18224745. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18231594. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18231841. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18234596. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18239241. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18239248. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18244257. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18244741. SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC APPLICATIONS simplified abstract (Intel Corporation)
- 18250580. VERTICAL SEMICONDUCTOR COMPONENT, AND METHOD FOR ITS PRODUCTION simplified abstract (Robert Bosch GmbH)
- 18252032. METHOD FOR SELECTIVELY ETCHING A METAL COMPONENT simplified abstract (Microsoft Technology Licensing, LLC)
- 18255425. SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18255425. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18298277. Isolation Structures in Semiconductor Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18298678. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18300867. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18303205. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18306004. VERTICALLY STACKED TRANSISTORS AND FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18314862. LOGIC CIRCUITS USING VERTICAL TRANSISTORS WITH BACKSIDE SOURCE OR DRAIN REGIONS simplified abstract (Intel Corporation)
- 18318587. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18322234. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18323715. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18331296. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18331463. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18334099. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18334849. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18336477. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18340440. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18345130. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18350614. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18357307. Parasitic Capacitance Reduction simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18360471. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18361030. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18364521. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18365452. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18367549. INTEGRATED CIRCUIT INCLUDING STANDARD CELL WITH A METAL LAYER HAVING A PATTERN AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18367852. INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
- 18368725. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18369236. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18370134. WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18370144. WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18370663. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18373360. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18376549. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18378874. SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 18379083. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18379731. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18383370. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP VIA SUBSTRATE CONTACTS FOR SUB-FIN ELECTRICAL CONTACT simplified abstract (Intel Corporation)
- 18387801. DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18388419. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18390952. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract (Intel Corporation)
- 18397700. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18401780. Ion Implantation For Nano-FET simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18401955. Shallow Trench Isolation Forming Method and Structures Resulting Therefrom simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18403076. HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18447580. MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18451819. SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18452581. CHANNEL STRUCTURES INCLUDING DOPED 2D MATERIALS FOR SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18452858. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18453529. SEMICONDUCTOR DEVICE INCLUDING NANOSHEET TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18456927. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18458489. TRANSISTOR DEVICE simplified abstract (Infineon Technologies AG)
- 18464839. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18466223. SEMICONDUCTOR ELEMENT WITH SHIELDING simplified abstract (Robert Bosch GmbH)
- 18467232. MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NEXPERIA B.V.)
- 18467251. MPS DIODE HAVING A DOPED REGION AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NEXPERIA B.V.)
- 18467258. MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NEXPERIA B.V.)
- 18467293. SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS simplified abstract (NEXPERIA B.V.)