18447580. MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chung-Liang Cheng of Changhua City (TW)

MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447580 titled 'MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes multiple layers of silicide, a contact structure, and a dielectric material. The device also involves a controller that determines etch process parameters for an atomic layer etch (ALE) process.

  • The semiconductor device has a multi-silicide structure with at least two conformal silicide layers.
  • The multi-silicide structure includes a first layer on a source/drain, a second layer on the first layer, and a capping layer on the second layer.
  • The device includes a contact structure on the multi-silicide structure.
  • A dielectric material surrounds the contact structure.
  • A controller determines etch process parameters for an atomic layer etch (ALE) process on the device.

Potential Applications

  • This technology can be applied in the manufacturing of semiconductor devices, such as integrated circuits and microprocessors.
  • It can improve the performance and reliability of these devices by enhancing the contact structure and optimizing the etch process.

Problems Solved

  • The multi-silicide structure helps to improve the electrical conductivity and contact resistance of the semiconductor device.
  • The use of conformal silicide layers and a capping layer enhances the stability and durability of the device.
  • The controller's determination of etch process parameters ensures precise and efficient etching during the manufacturing process.

Benefits

  • The multi-silicide structure improves the overall performance and functionality of the semiconductor device.
  • The optimized etch process parameters result in better control and accuracy during the manufacturing process.
  • The enhanced contact structure and stability of the device lead to improved reliability and longevity.


Original Abstract Submitted

A semiconductor device includes a multi-silicide structure comprising at least two conformal silicide layers. The multi-silicide structure may include a first conformal silicide layer on a source/drain, a second conformal silicide layer on the first conformal silicide layer, and a capping layer over the second conformal silicide layer. The semiconductor device includes a contact structure on the multi-silicide structure. The semiconductor device includes a dielectric material around the contact structure. In some implementations, a controller may determine etch process parameters to be used by an etch tool to perform an iteration of an atomic layer etch (ALE) process on the semiconductor device.

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