18239248. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

INTEGRATED CIRCUIT DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Seunghyun Song of Suwon-si (KR)

Minsuk Kim of Suwon-si (KR)

Pilkwang Kim of Suwon-si (KR)

Takeshi Okagaki of Suwon-si (KR)

Geunmyeong Kim of Suwon-si (KR)

Ahyoung Kim of Suwon-si (KR)

Yoonsuk Kim of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18239248 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The integrated circuit device described in the patent application includes a unique back side interconnection structure, a fin-type active area, a metal silicide film, gate structures, and source/drain areas on the active substrate.

• Back side interconnection structure extending in a first horizontal direction
• Fin-type active area on the back side interconnection structure
• Metal silicide film between the back side interconnection structure and the active substrate
• Plurality of gate structures extending in a second horizontal direction perpendicular to the first direction
• First and second source/drain areas spaced apart with gate structures in between
• First source/drain area directly contacts the active substrate
• Second source/drain area insulated from the active substrate

Potential Applications

The technology described in this patent application could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, tablets, and computers.

Problems Solved

This technology helps in improving the performance and efficiency of integrated circuits by optimizing the layout and structure of the components on the active substrate.

Benefits

The benefits of this technology include enhanced functionality, increased speed, reduced power consumption, and overall improved performance of electronic devices utilizing these integrated circuits.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for manufacturing high-performance integrated circuits for consumer electronics and other electronic devices.

Possible Prior Art

One possible prior art could be the use of metal silicide films in semiconductor devices to improve conductivity and performance. Another could be the integration of fin-type active areas in advanced integrated circuits for better control and efficiency.

Unanswered Questions

How does this technology compare to existing integrated circuit designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing integrated circuit designs to assess the performance and efficiency improvements offered by this technology.

What are the specific manufacturing processes involved in implementing this technology in semiconductor fabrication?

The article does not delve into the detailed manufacturing processes required to implement this technology in semiconductor fabrication, leaving a gap in understanding the practical aspects of its production.

Original Abstract Submitted

An integrated circuit device includes a back side interconnection structure extending in a first horizontal direction. An active substrate includes a fin-type active area extending in the first horizontal direction on the back side interconnection structure. A metal silicide film is between the back side interconnection structure and the active substrate. A plurality of gate structures extends in a second horizontal direction perpendicular to the first horizontal direction on the active substrate. A first source/drain area and a second source/drain area are spaced apart from each other in the first horizontal direction with the plurality of gate structures therebetween on the active substrate. The first source/drain area directly contacts the active substrate. The second source/drain area is spaced apart from the active substrate and insulated from the active substrate.