18323715. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Wookhyun Kwon of Suwon-si (JP)
Heonjong Shin of Suwon-si (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18323715 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with an active pattern, a channel pattern, a source/drain pattern, a gate electrode, and an insulation pattern. The channel pattern consists of vertically stacked semiconductor patterns, with the lowermost one being a first semiconductor pattern. The source/drain pattern is connected to the semiconductor patterns, while the gate electrode includes inner electrodes below all semiconductor patterns except the first one. The insulation pattern, located between the first semiconductor pattern and the active pattern, comprises a dielectric pattern and a protection layer.
- The semiconductor device features vertically stacked semiconductor patterns in the channel pattern.
- The gate electrode includes inner electrodes below all semiconductor patterns except the first one.
- The insulation pattern consists of a dielectric pattern and a protection layer.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, sensors, and memory devices.
Problems Solved
This innovation helps in enhancing the performance and efficiency of semiconductor devices by optimizing the layout and structure of the components, leading to improved functionality and reliability.
Benefits
The benefits of this technology include increased device performance, higher integration density, improved power efficiency, and enhanced overall functionality of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for manufacturing advanced electronic devices with higher performance and reliability.
Possible Prior Art
One possible prior art could be the use of vertically stacked semiconductor patterns in semiconductor devices to improve device performance and functionality.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This technology offers improved performance and efficiency compared to existing semiconductor device structures by optimizing the layout and structure of the components. It enhances functionality and reliability, leading to better overall device performance.
What are the specific electronic applications that could benefit the most from this technology?
This technology could benefit various electronic applications such as integrated circuits, sensors, and memory devices by improving device performance, power efficiency, and functionality.
Original Abstract Submitted
A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern, a gate electrode, and an insulation pattern. The channel pattern may include semiconductor patterns that are spaced apart from each other and vertically stacked. A lowermost one of the semiconductor patterns may be a first semiconductor pattern. The source/drain pattern may be connected to the semiconductor patterns. The gate electrode may be on the semiconductor patterns and may include a plurality of inner electrodes below the semiconductor patterns except the first semiconductor pattern. The insulation pattern may be between the first semiconductor pattern and the active pattern. The insulation pattern may include a dielectric pattern and a protection layer. The protection layer may be between the dielectric pattern and the first semiconductor pattern. The protection layer may be between the dielectric pattern and the active pattern.
