18361030. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor(s)

Hiromichi Kimpara of Nisshin-shi (JP)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361030 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The abstract describes a method of manufacturing a semiconductor device that involves forming a repeating layer with alternating columns of different conductivity types. The lower layer of the repeating layer is formed by replacing a lower epitaxial layer for the first conductivity column with a region for the second conductivity column. Similarly, the upper layer of the repeating layer is formed by replacing an upper epitaxial layer for the first conductivity column with a region for the second conductivity column. The end portion of the second conductivity column, located between the central portion and the boundary surface of the lower and upper layers, has a smaller width in the repeating direction compared to the central portion.

  • The method involves forming a repeating layer with alternating columns of different conductivity types.
  • The lower layer of the repeating layer is formed by replacing the lower epitaxial layer for the first conductivity column with a region for the second conductivity column.
  • The upper layer of the repeating layer is formed by replacing the upper epitaxial layer for the first conductivity column with a region for the second conductivity column.
  • The end portion of the second conductivity column has a smaller width in the repeating direction compared to the central portion.

Potential applications of this technology:

  • Manufacturing of semiconductor devices with improved performance and functionality.
  • Integration of different types of conductivity columns in a repeating layer for specific circuit requirements.

Problems solved by this technology:

  • Enables the formation of a repeating layer with alternating conductivity columns, allowing for the creation of complex semiconductor devices.
  • Provides a method to control the width of the end portion of the second conductivity column, which can have an impact on device performance.

Benefits of this technology:

  • Enhanced flexibility in designing and manufacturing semiconductor devices.
  • Improved performance and functionality of semiconductor devices.
  • Increased control over the width of specific portions of the conductivity columns, allowing for fine-tuning of device characteristics.


Original Abstract Submitted

A method of manufacturing a semiconductor device includes: forming a lower layer of a repeating layer in which a first conductivity column and a second conductivity column are alternately arranged in a repeating direction by replacing a lower epitaxial layer for the first conductivity column with a region for the second conductivity column; and forming an upper layer of the repeating layer by replacing an upper epitaxial layer for the first conductivity column with a region for the second conductivity column. The second conductivity column includes a central portion and an end portion between the central portion and a boundary surface of the lower layer and the upper layer. A width of the end portion in the repeating direction is smaller than that of the central portion.

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