18250580. VERTICAL SEMICONDUCTOR COMPONENT, AND METHOD FOR ITS PRODUCTION simplified abstract (Robert Bosch GmbH)
VERTICAL SEMICONDUCTOR COMPONENT, AND METHOD FOR ITS PRODUCTION
Organization Name
Inventor(s)
Alberto Martinez-limia of Pliezhausen (DE)
Daniel Krebs of Aufhausen (DE)
Stephan Schwaiger of Bodelshausen (DE)
Wolfgang Feiler of Reutlingen (DE)
VERTICAL SEMICONDUCTOR COMPONENT, AND METHOD FOR ITS PRODUCTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18250580 titled 'VERTICAL SEMICONDUCTOR COMPONENT, AND METHOD FOR ITS PRODUCTION
Simplified Explanation
The abstract describes a vertical semiconductor component that includes a drift region, a trench structure, a shielding structure, and an edge termination structure. The shielding structure has different regions with varying thicknesses and doping degrees, and the edge termination structure is situated between the drift region and the shielding structure.
- The component is a vertical semiconductor device with a unique structure and design.
- It includes a drift region, trench structure, shielding structure, and edge termination structure.
- The shielding structure has different regions with varying thicknesses and doping degrees.
- The edge termination structure is situated between the drift region and the shielding structure.
Potential Applications
- Power electronics
- High voltage applications
- Semiconductor devices requiring efficient edge termination
Problems Solved
- Improved performance and efficiency of vertical semiconductor components
- Enhanced edge termination to prevent leakage and breakdown
- Better control of conductivity and doping levels in different regions
Benefits
- Higher power handling capabilities
- Improved reliability and durability
- Enhanced efficiency and performance of semiconductor devices
Original Abstract Submitted
A vertical semiconductor component. The component includes: a drift region having a first conductivity type; a trench structure on or above the drift region, a shielding structure situated laterally next to at least one sidewall of the trench structure on or above the drift region and having a second conductivity type, and the shielding structure having at least a part of a shielding structure-trench structure such that the shielding structure has at least a first region having a first thickness and a second region having a second thickness, and an edge termination structure on or above the drift region and having the second conductivity type, and the shielding structure having a first doping degree, and the edge termination structure having a second doping degree; and at least in the second region of the shielding structure, the edge termination structure being situated between the drift region and the shielding structure.
