18160002. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

SEMICONDUCTOR DEVICE

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Katsuhisa Tanaka of Himeji Hyogo (JP)

Hiroshi Kono of Himeji Hyogo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18160002 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application consists of multiple layers and electrodes, with varying carrier concentrations and conductivity types. Here is a simplified explanation of the abstract:

• The device includes three electrodes - a first, a second, and a third electrode.
• There are four semiconductor layers - a first and second semiconductor layer of a first conductivity type, a third semiconductor layer, and a fourth semiconductor layer of a second conductivity type.
• The third electrode has first and second portions, with the first semiconductor layer facing the first portion through an insulating layer.
• The first and second semiconductor layers contain silicon and carbon.
• The carrier concentration of the fourth semiconductor layer is higher than that of the third semiconductor layer.

Potential Applications

This semiconductor device could be used in various electronic applications such as sensors, transistors, and integrated circuits.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by controlling carrier concentrations and conductivity types in different layers.

Benefits

The benefits of this technology include enhanced device performance, increased efficiency, and potentially lower power consumption in electronic devices.

Potential Commercial Applications

The potential commercial applications of this technology could be in the fields of telecommunications, consumer electronics, and automotive electronics.

Possible Prior Art

One possible prior art could be the use of different semiconductor layers with varying carrier concentrations and conductivity types in electronic devices to improve their performance and efficiency.

How does this technology compare to existing semiconductor devices in terms of efficiency and performance?

This article does not provide a direct comparison with existing semiconductor devices to evaluate its efficiency and performance.

What are the specific electronic devices that could benefit the most from this technology?

The article does not specify the specific electronic devices that could benefit the most from the semiconductor device described in the patent application.

Original Abstract Submitted

A semiconductor device includes a first electrode, a second electrode, a third electrode located between the first electrode and the second electrode, a first semiconductor layer connected to the first electrode, a second semiconductor layer connected to the second electrode, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of the second conductivity type. The third electrode includes first and second portions. The first semiconductor layer faces the first portion via an insulating layer. The first and second semiconductor layers are of a first conductivity type and include silicon and carbon. A carrier concentration of the fourth semiconductor layer is greater than a carrier concentration of the third semiconductor layer.