18177245. SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
Organization Name
Inventor(s)
Tatsuo Shimizu of Shinagawa Tokyo (JP)
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18177245 titled 'SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
Simplified Explanation
The semiconductor device described in the abstract includes a silicon carbide layer with various regions and trenches, along with gate electrodes placed within the trenches.
- Silicon carbide layer with first and second trenches and gate electrodes:
- The device features a silicon carbide layer with a first face, first and second trenches, and gate electrodes placed within these trenches.
- Different silicon carbide regions:
- The device includes n-type and p-type silicon carbide regions, each serving specific functions within the semiconductor device.
- Optimization of silicon carbide region widths and lengths:
- The width and length of the silicon carbide regions are optimized to enhance the performance of the semiconductor device.
- Potential Applications:
- Power electronics, high-temperature applications, and electric vehicles.
- Problems Solved:
- Improved efficiency, higher temperature tolerance, and increased power handling capabilities.
- Benefits:
- Enhanced performance, increased reliability, and longer lifespan.
- Potential Commercial Applications:
- Power electronics industry, automotive sector, and renewable energy technologies.
- Possible Prior Art:
- Previous semiconductor devices with silicon carbide layers and gate electrodes.
- Unanswered Questions:
- 1. How does the optimization of silicon carbide region widths and lengths impact the overall performance of the semiconductor device?
- Unanswered Questions:
The abstract mentions that the width and length of the silicon carbide regions are optimized, but it does not delve into the specific effects of this optimization on the device's performance.
- 2. What are the specific applications in the power electronics industry where this semiconductor device could be most beneficial?
While the abstract mentions potential applications in power electronics, it does not specify the exact areas within the industry where this technology could have the most significant impact.
Original Abstract Submitted
A semiconductor device of an embodiment includes a silicon carbide layer including a first face parallel to a first direction, a first trench and a second trench extending in the first direction, a first gate electrode in the first trench, a second gate electrode in the second trench, an n-type first silicon carbide region, a p-type second silicon carbide region between the first silicon carbide region and the first face, an n-type third silicon carbide region between the second silicon carbide region and the first face, a p-type fourth silicon carbide region at a bottom of the first trench, and a fifth silicon carbide region at a bottom of the second trench. A width of the fourth silicon carbide region is less than a width of the first trench, and a length of the fourth silicon carbide region is more than the width of the fourth silicon carbide region.
