18159989. TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Po Shao Lin of Taipei City (TW)
Jiun-Ming Kuo of Taipei City (TW)
Yuan-Ching Peng of Hsinchu (TW)
You-Ting Lin of Miaoli County (TW)
Yu Mei Jian of Nantou County (TW)
TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18159989 titled 'TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS
Simplified Explanation
The semiconductor structure described in the abstract includes a first active region, a second active region, and an epitaxial feature sandwiched between them. The first active region is wider than the second active region.
- The semiconductor structure includes a first active region and a second active region.
- An epitaxial feature is sandwiched between the first and second active regions.
- The first active region is wider than the second active region.
Potential Applications
The semiconductor structure could be used in:
- High-performance electronic devices
- Power electronics
- Optoelectronic devices
Problems Solved
The semiconductor structure addresses issues related to:
- Improving device performance
- Enhancing efficiency
- Reducing power consumption
Benefits
The semiconductor structure offers benefits such as:
- Increased speed and performance
- Better thermal management
- Enhanced reliability
Potential Commercial Applications
The technology could be applied in:
- Semiconductor manufacturing industry
- Electronics industry
- Research and development sector
Possible Prior Art
One possible prior art could be:
- Semiconductor structures with different active regions and epitaxial features.
What are the specific dimensions of the first and second active regions in the semiconductor structure?
The specific dimensions of the first and second active regions are not provided in the abstract.
How does the epitaxial feature contribute to the overall performance of the semiconductor structure?
The abstract does not elaborate on how the epitaxial feature contributes to the overall performance of the semiconductor structure.
Original Abstract Submitted
Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first active region extending lengthwise along a first direction and having a first width along a second direction perpendicular to the first direction, a second active region extending lengthwise along the first direction and having a second width along the second direction, and an epitaxial feature sandwiched between the first active region and the second active region along the first direction. The first width is greater than the second width.
