18345130. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18345130 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes:
- Channels spaced apart on a substrate in a vertical direction
- Gate structure on the substrate bordering lower and upper surfaces and a first sidewall of the channels
- Source/drain layer on a portion of the substrate adjacent to the gate structure and contacting second sidewalls of the channels
- Nitrogen-containing portion formed at an upper portion of the channels, possibly doped with nitrogen
Potential applications of this technology:
- Improved performance and efficiency of semiconductor devices
- Enhanced control over electron flow in the channels
- Increased reliability and longevity of the semiconductor device
Problems solved by this technology:
- Minimizing leakage current in semiconductor devices
- Enhancing the speed and functionality of electronic devices
- Improving the overall performance of integrated circuits
Benefits of this technology:
- Higher performance and efficiency in semiconductor devices
- Better control and management of electron flow
- Increased reliability and longevity of electronic devices
Original Abstract Submitted
A semiconductor device includes channels spaced apart from each other on a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a gate structure on the substrate and bordering lower and upper surfaces and a first sidewall of at least a portion of each of the channels, and a source/drain layer on a portion of the substrate adjacent to the gate structure and contacting second sidewalls of the channels. A nitrogen-containing portion is formed at an upper portion of an uppermost one of the channels, and may be doped with nitrogen.
