18157054. METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this method compare to traditional doping techniques in terms of efficiency and precision?
- 1.11 What are the potential challenges or limitations of using ion implantation for doping semiconductor materials?
- 1.12 Original Abstract Submitted
METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Ko-Cheng Liu of Hsinchu City (TW)
Chang-Miao Liu of Hsinchu City (TW)
METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18157054 titled 'METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF
Simplified Explanation
The abstract describes a method of fabricating a device with fins on a substrate, where each fin contains multiple semiconductor channel layers. An ion implantation process is used to introduce a dopant species into the topmost semiconductor channel layer of a fin, deactivating it in some cases.
- The method involves providing a substrate with fins, each containing multiple semiconductor channel layers.
- An ion implantation process is performed on a fin to introduce a dopant species into the topmost semiconductor channel layer, deactivating it in some cases.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This method helps in controlling the conductivity of semiconductor devices by selectively deactivating specific semiconductor channel layers.
Benefits
The method allows for precise doping of semiconductor materials, leading to improved performance and efficiency of semiconductor devices.
Potential Commercial Applications
This technology could be utilized in the production of high-performance electronic devices for various industries, including telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of ion implantation processes in semiconductor manufacturing to introduce dopants into materials for controlling conductivity.
Unanswered Questions
How does this method compare to traditional doping techniques in terms of efficiency and precision?
The article does not provide a comparison between this method and traditional doping techniques in terms of efficiency and precision.
What are the potential challenges or limitations of using ion implantation for doping semiconductor materials?
The article does not address the potential challenges or limitations of using ion implantation for doping semiconductor materials.
Original Abstract Submitted
A method of fabricating a device includes providing a plurality of fins extending from a substrate. In some embodiments, each fin of the plurality of fins includes a plurality of semiconductor channel layers. In various example, the method further includes performing an ion implantation process into a first fin of the plurality of fins to introduce a dopant species into a topmost semiconductor channel layer of the plurality of semiconductor channel layers of the first fin. In some embodiments, the ion implantation process deactivates the topmost semiconductor channel layer of the plurality of semiconductor channel layers of the first fin.
