18224745. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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INTEGRATED CIRCUIT DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jooho Jung of Suwon-si (KR)

Junggil Yang of Suwon-si (KR)

Deokhwan Kim of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18224745 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The abstract describes an integrated circuit device that includes a fin-type active region protruding from a substrate. The fin-type active region consists of three sub-fin-type active regions, with a first gate line extending in a second lateral direction on the first sub-fin-type active region and a second gate line extending in the second lateral direction on the second sub-fin-type active region. The device also includes a diffusion break structure passing through a portion of the third sub-fin-type active region in a vertical direction, with a groove portion in the upper part of the structure filled with a crack filler.

  • The integrated circuit device has a fin-type active region with three sub-fin-type active regions.
  • Gate lines extend in a second lateral direction on the first and second sub-fin-type active regions.
  • A diffusion break structure passes through a portion of the third sub-fin-type active region in a vertical direction.
  • The diffusion break structure has a groove portion in its upper part.
  • The groove portion is filled with a crack filler.

Potential applications of this technology:

  • Integrated circuit devices with improved performance and functionality.
  • Fin-type active regions allow for better control of electrical properties.
  • The diffusion break structure helps prevent cracks and improves reliability.

Problems solved by this technology:

  • Improved control of electrical properties in integrated circuit devices.
  • Prevention of cracks in the active region.
  • Enhanced reliability of the device.

Benefits of this technology:

  • Improved performance and functionality of integrated circuit devices.
  • Increased reliability and durability.
  • Enhanced control over electrical properties.


Original Abstract Submitted

An integrated circuit device includes: a fin-type active region protruding from a substrate and extending in a first lateral direction, wherein the fin-type active region includes a first sub-fin-type active region, a second sub-fin-type active region, and a third sub-fin-type active region that is disposed between the first sub-fin-type active region and the second sub-fin-type active region; a first gate line extending in a second lateral direction on the first sub-fin-type active region, wherein the second lateral direction intersects with the first lateral direction; a second gate line extending in the second lateral direction on the second sub-fin-type active region; a diffusion break structure passing through a portion of the third sub-fin-type active region in a vertical direction, wherein the diffusion break structure has a groove portion in an upper portion thereof; and a crack filler filling the groove portion.

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